公开(公告)号：US20240071853A1

公开(公告)日：2024-02-29

申请号：US18140132

申请日：2023-04-27

Applicant: Infineon Technologies AG

Inventor： Hans Hartung ,  Martin Goldammer ,  Carsten Ehlers ,  Katja Engelkemeier ,  Guido Bönig

IPC: H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L23/053 ,  H01L25/11

CPC classification number: H01L23/3135 ,  H01L21/56 ,  H01L23/053 ,  H01L24/48 ,  H01L25/115 ,  H01L2224/48091 ,  H01L2224/48225

Abstract: A power semiconductor module includes a power semiconductor die arranged on a power substrate, a housing enclosing the power semiconductor die and the power substrate, wherein an interior volume formed by the housing is divided by interior walls into at least a first compartment and a second compartment, wherein the power semiconductor die is arranged within the first compartment, a first encapsulation material encapsulating the power semiconductor die and at least partially filling the first compartment, and a second encapsulation material different from the first encapsulation material, the second encapsulation material encapsulating the first encapsulation material and at least partially filling the second compartment, wherein the first encapsulation material is arranged within the first compartment but not within the second compartment.