公开(公告)号：US09123766B2

公开(公告)日：2015-09-01

申请号：US14038452

申请日：2013-09-26

Applicant: Infineon Technologies AG

Inventor： Klaus Diefenbeck

IPC: H01L29/66 ,  H01L29/73 ,  H01L21/265 ,  H01L29/08 ,  H01L29/10

CPC classification number: H01L29/73 ,  H01L21/26513 ,  H01L29/0813 ,  H01L29/1004 ,  H01L29/66234 ,  H01L29/66287

Abstract: In accordance with an embodiment of the present invention a transistor is disclosed. The transistor comprises a collector, a base and an emitter, wherein a first end width of the base is larger than a middle width of the base, wherein a first end width of the collector is larger than a middle width of the collector, or wherein a first end width of the emitter is larger than a middle width of the emitter.

Abstract translation: 根据本发明的实施例，公开了一种晶体管。 晶体管包括集电极，基极和发射极，其中基极的第一端宽度大于基极的中间宽度，其中集电极的第一端宽度大于集电极的中间宽度，或者其中 发射极的第一端宽度大于发射极的中间宽度。

公开(公告)号：US11929305B2

公开(公告)日：2024-03-12

申请号：US17532446

申请日：2021-11-22

Applicant: Infineon Technologies AG

Inventor： Andre Schmenn ,  Klaus Diefenbeck ,  Joost Adriaan Willemen

IPC: H01L23/48 ,  H01L21/822 ,  H01L23/482 ,  H01L27/02 ,  H01L21/56

CPC classification number: H01L23/4825 ,  H01L21/822 ,  H01L27/0292 ,  H01L21/56 ,  H01L27/0255

Abstract: In a method for manufacturing an electrostatic discharge protection circuit, an electrostatic discharge device structure is formed during a front side processing of a semiconductor substrate in a first area. Contact pads are formed on the front side on the electrostatic discharge device structure and in a second area. During back side processing of the semiconductor substrate, a metal connection between the first electrostatic discharge device structure and the second area is formed.

公开(公告)号：US20140027776A1

公开(公告)日：2014-01-30

申请号：US14038452

申请日：2013-09-26

Applicant: Infineon Technologies AG

Inventor： Klaus Diefenbeck

IPC: H01L29/73

CPC classification number: H01L29/73 ,  H01L21/26513 ,  H01L29/0813 ,  H01L29/1004 ,  H01L29/66234 ,  H01L29/66287

Abstract: In accordance with an embodiment of the present invention a transistor is disclosed. The transistor comprises a collector, a base and an emitter, wherein a first end width of the base is larger than a middle width of the base, wherein a first end width of the collector is larger than a middle width of the collector, or wherein a first end width of the emitter is larger than a middle width of the emitter.

Abstract translation: 根据本发明的实施例，公开了一种晶体管。 晶体管包括集电极，基极和发射极，其中基极的第一端宽度大于基极的中间宽度，其中集电极的第一端宽度大于集电极的中间宽度，或者其中 发射极的第一端宽度大于发射极的中间宽度。

公开(公告)号：US20240186220A1

公开(公告)日：2024-06-06

申请号：US18442671

申请日：2024-02-15

Applicant: Infineon Technologies AG

Inventor： Andre Schmenn ,  Klaus Diefenbeck ,  Joost Adriaan Willemen

IPC: H01L23/482 ,  H01L21/56 ,  H01L21/822 ,  H01L27/02

CPC classification number: H01L23/4825 ,  H01L21/822 ,  H01L27/0292 ,  H01L21/56 ,  H01L27/0255

Abstract: An electrostatic discharge protection circuit includes: a first electrostatic discharge protection device structure; a first contact pad above the first electrostatic discharge protection device structure in a cross-sectional view; and below the first electrostatic discharge protection device structure in the cross-sectional view, a metal connection coupling the first electrostatic discharge protection device structure to a second contact pad remote from the first contact pad, wherein the metal connection in the cross-sectional view only partially overlaps the first electrostatic discharge protection device structure.

公开(公告)号：US20220165646A1

公开(公告)日：2022-05-26

申请号：US17532446

申请日：2021-11-22

Applicant: Infineon Technologies AG

Inventor： Andre Schmenn ,  Klaus Diefenbeck ,  Joost Adriaan Willemen

IPC: H01L23/482 ,  H01L27/02 ,  H01L21/822

Abstract: In a method for manufacturing an electrostatic discharge protection circuit, an electrostatic discharge device structure is formed during a front side processing of a semiconductor substrate in a first area. Contact pads are formed on the front side on the electrostatic discharge device structure and in a second area. During back side processing of the semiconductor substrate, a metal connection between the first electrostatic discharge device structure and the second area is formed.