公开(公告)号：US20140037116A1

公开(公告)日：2014-02-06

申请号：US14044654

申请日：2013-10-02

Applicant: Infineon Technologies AG

Inventor： Wolfgang Friza ,  Thomas Grille ,  Klaus Muemmler ,  Guenter Zieger ,  Carsten Ahrens

IPC: H04R23/00

CPC classification number: H04R23/00 ,  B81B2201/0257 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C1/00047 ,  B81C1/00936 ,  B81C2201/0109 ,  G01L9/0042 ,  H04R19/005 ,  H04R31/006

Abstract: Embodiments show a method for fabricating a cavity structure, a semiconductor structure, a cavity structure for a semiconductor device and a semiconductor microphone fabricated by the same. In some embodiments the method for fabricating a cavity structure comprises providing a first layer, depositing a carbon layer on the first layer, covering at least partially the carbon layer with a second layer to define the cavity structure, removing by means of dry etching the carbon layer between the first and second layer so that the cavity structure is formed.

Abstract translation: 实施例示出了用于制造空腔结构的方法，半导体结构，用于半导体器件的腔结构和由其制造的半导体麦克风。 在一些实施例中，用于制造空腔结构的方法包括提供第一层，在第一层上沉积碳层，至少部分地覆盖碳层与第二层以限定空腔结构，通过干法蚀刻碳 在第一和第二层之间形成空腔结构。

公开(公告)号：US09363609B2

公开(公告)日：2016-06-07

申请号：US14044654

申请日：2013-10-02

Applicant: Infineon Technologies AG

Inventor： Wolfgang Friza ,  Thomas Grille ,  Klaus Muemmler ,  Guenter Ziegler ,  Carsten Ahrens

IPC: H01L29/00 ,  H04R23/00 ,  B81C1/00 ,  G01L9/00 ,  H04R19/00 ,  H04R31/00

CPC classification number: H04R23/00 ,  B81B2201/0257 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C1/00047 ,  B81C1/00936 ,  B81C2201/0109 ,  G01L9/0042 ,  H04R19/005 ,  H04R31/006

Abstract: Embodiments show a method for fabricating a cavity structure, a semiconductor structure, a cavity structure for a semiconductor device and a semiconductor microphone fabricated by the same. In some embodiments the method for fabricating a cavity structure comprises providing a first layer, depositing a carbon layer on the first layer, covering at least partially the carbon layer with a second layer to define the cavity structure, removing by means of dry etching the carbon layer between the first and second layer so that the cavity structure is formed.