SENSOR AND METHOD FOR DETECTING GUIDED THERMAL RADIATION

    公开(公告)号:US20220381753A1

    公开(公告)日:2022-12-01

    申请号:US17658564

    申请日:2022-04-08

    IPC分类号: G01N33/00 G01K7/01 G01N1/44

    摘要: A fluid sensor includes a support structure having a top main surface region; a thermal emitter on the top main surface region of the support structure; a thermal radiation detector on the top main surface region of the support structure; and a waveguide structure having a first and a second waveguide section on the top main surface region of the support structure. The first waveguide section guides a first portion of the thermal radiation to the thermal radiation detector and the second waveguide section guides a second portion of the thermal radiation to the thermal radiation detector. The waveguide structure enables an interaction of an evanescence field of the guided first and/or second portion of the thermal radiation with a surrounding fluid.

    MEMS-component
    2.
    发明授权

    公开(公告)号:US11286158B2

    公开(公告)日:2022-03-29

    申请号:US16287232

    申请日:2019-02-27

    摘要: A MEMS component includes a semiconductor substrate stack having a first semiconductor substrate and a second semiconductor substrate, wherein the semiconductor substrate stack has a cavity formed within the first and second semiconductor substrates, and wherein at least the first or the second semiconductor substrate has an access opening for gas exchange between the cavity and an environment. A radiation source is arranged at the first semiconductor substrate, and a radiation detector is arranged at the second semiconductor substrate. Two mutually spaced apart reflection elements are arranged in a beam path between the radiation source and the radiation detector, wherein one reflection element is partly transmissive to the emitted radiation from the cavity in the direction of the radiation detector, and wherein an interspace between the two mutually spaced apart reflection elements has a length that is at least ten times the wavelength of the emitted radiation.

    MEMS-COMPONENT
    3.
    发明申请
    MEMS-COMPONENT 审中-公开

    公开(公告)号:US20190270640A1

    公开(公告)日:2019-09-05

    申请号:US16287232

    申请日:2019-02-27

    IPC分类号: B81B7/02 B81B3/00

    摘要: A MEMS component includes a semiconductor substrate stack having a first semiconductor substrate and a second semiconductor substrate, wherein the semiconductor substrate stack has a cavity formed within the first and second semiconductor substrates, and wherein at least the first or the second semiconductor substrate has an access opening for gas exchange between the cavity and an environment. A radiation source is arranged at the first semiconductor substrate, and a radiation detector is arranged at the second semiconductor substrate. Two mutually spaced apart reflection elements are arranged in a beam path between the radiation source and the radiation detector, wherein one reflection element is partly transmissive to the emitted radiation from the cavity in the direction of the radiation detector, and wherein an interspace between the two mutually spaced apart reflection elements has a length that is at least ten times the wavelength of the emitted radiation.

    OPTICAL RESONATOR SYSTEM, NARROWBAND MID-INFRARED RADIATION SOURCE

    公开(公告)号:US20230125167A1

    公开(公告)日:2023-04-27

    申请号:US18046231

    申请日:2022-10-13

    IPC分类号: G02B6/10 G02B6/122

    摘要: An optical resonator system includes a multi-strip waveguide structure having spaced semiconductor strips for guiding an IR radiation, a STP resonance structure (STP=slab tamm-plasmon-polariton), wherein the STP resonance structure includes an alternating arrangement of semiconductor strips and interjacent dielectric strips and includes a metal strip adjacent to the semiconductor strip at a boundary region of the STP resonance structure, wherein the metal strip and the adjacent semiconductor strip are arranged to provide a metal-semiconductor interface, and wherein the semiconductor strips of the multi-strip waveguide structure and the semiconductor strips of the STP resonance structure are arranged perpendicular to each other, and an optical coupling structure having a semiconductor layer, wherein the semiconductor layer is arranged between the multi-strip waveguide structure and the STP resonance structure for optically coupling the IR radiation between the multi-strip waveguide structure and the STP resonance structure.

    Pillar Photonic Crystal
    8.
    发明申请

    公开(公告)号:US20200319095A1

    公开(公告)日:2020-10-08

    申请号:US16817874

    申请日:2020-03-13

    摘要: Techniques (e.g., implemented in devices, methods and/or in non-transitory storage units) are used for confining wavelengths, e.g., using a pillar photonic crystal. A semiconductor device includes a pillar photonic crystal including a structure and a plurality of pillars extending from the structure in a height direction, wherein the plurality of pillars form at least one waveguide for electromagnetic radiation at a specific wavelength, the at least one waveguide extending in at least one planar direction, wherein the structure includes a confining layer in doped semiconductor material to support propagation of surface plasmon polaritons.