公开(公告)号：US20160211140A1

公开(公告)日：2016-07-21

申请号：US14997221

申请日：2016-01-15

Applicant: Infineon Technologies AG

Inventor： Jens Peter Konrath ,  Ronny Kern ,  Stefan Krivec ,  Ulrich Schmid ,  Laura Stoeber

IPC: H01L21/285 ,  H01L21/265 ,  H01L29/47

CPC classification number: H01L21/28537 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/0455 ,  H01L21/0495 ,  H01L21/2236 ,  H01L21/2652 ,  H01L21/67115 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/36 ,  H01L29/365 ,  H01L29/401 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66143 ,  H01L29/66848 ,  H01L29/872

Abstract: A method for processing a semiconductor includes irradiating a surface of a semiconductor with ions of a first gas type for cleaning the surface and implanting of ions of a second gas type in a region below the surface of the semiconductor for creating defects in the region below the surface. The irradiating and the implanting are performed within the same chamber.

Abstract translation: 一种用于处理半导体的方法包括用半导体的表面照射用于清洁表面的第一气体类型的离子和将第二气体类型的离子注入到半导体表面下方的区域中，用于在低于该半导体区域的区域内产生缺陷 表面。 照射和植入在相同的室内进行。