公开(公告)号：US20160056251A1

公开(公告)日：2016-02-25

申请号：US14814758

申请日：2015-07-31

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Anton Mauder ,  Matteo Dainese ,  Franz Hirler ,  Christian Jaeger ,  Maximillian Roesch ,  Wolfgang Roesner ,  Martin Stiftinger ,  Robert Strenz

IPC: H01L29/423 ,  H01L29/792 ,  H01L27/02 ,  H01L27/115 ,  H01L27/06

CPC classification number: H01L29/42344 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/0207 ,  H01L27/0623 ,  H01L27/11521 ,  H01L27/11556 ,  H01L27/11568 ,  H01L27/11573 ,  H01L27/11582 ,  H01L29/0619 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42324 ,  H01L29/4234 ,  H01L29/42376 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/7883 ,  H01L29/792

Abstract: A semiconductor switching device includes a first load terminal electrically connected to source zones of transistor cells. The source zones form first pn junctions with body zones. A second load terminal is electrically connected to a drain construction that forms second pn junctions with the body zones. Control structures, which include a control electrode and charge storage structures, directly adjoin the body zones. The control electrode controls a load current through the body zones. The charge storage structures insulate the control electrode from the body zones and contain a control charge adapted to induce inversion channels in the body zones in the absence of a potential difference between the control electrode and the first load electrode.

Abstract translation: 半导体开关器件包括电连接到晶体管单元的源极区的第一负载端子。 源区与身体区形成第一个pn结。 第二负载端子电连接到与主体区域形成第二pn结的排水构造。 包括控制电极和电荷存储结构的控制结构直接与身体区相邻。 控制电极控制穿过身体区域的负载电流。 电荷存储结构将控制电极与体区绝缘，并且在控制电极和第一负载电极之间没有电位差的情况下，包含适于在体区中诱导反转通道的控制电荷。