公开(公告)号：US20190259874A1

公开(公告)日：2019-08-22

申请号：US16398277

申请日：2019-04-30

Applicant: Infineon Technologies AG

Inventor： Paul Ganitzer ,  Arno Zechmann ,  Michael Jacob

IPC: H01L29/78 ,  H01L23/31 ,  H01L29/10 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L23/485 ,  H01L21/283

Abstract: In various embodiments a semiconductor device is provided, including a semiconductor body including a drift region and a gate electrode arranged adjacent to the drift region; and a contact structure provided over the drift region of the semiconductor body and having a first metal layer, an adhesion layer over the first metal layer and a second metal layer over the adhesion layer.

公开(公告)号：US20150221764A1

公开(公告)日：2015-08-06

申请号：US14171839

申请日：2014-02-04

Applicant: Infineon Technologies AG

Inventor： Paul Ganitzer ,  Arno Zechmann ,  Michael Jacob

IPC: H01L29/78 ,  H01L23/31 ,  H01L21/283 ,  H01L29/66 ,  H01L29/10 ,  H01L29/45

CPC classification number: H01L29/7813 ,  H01L21/283 ,  H01L23/3157 ,  H01L23/3171 ,  H01L23/485 ,  H01L23/53238 ,  H01L29/1095 ,  H01L29/41741 ,  H01L29/45 ,  H01L29/66666 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7827 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In various embodiments a semiconductor device is provided, including a semiconductor body including a drift region and a gate electrode arranged adjacent to the drift region; and a contact structure provided over the drift region of the semiconductor body and having a first metal layer, an adhesion layer over the first metal layer and a second metal layer over the adhesion layer.

Abstract translation: 在各种实施例中，提供了一种半导体器件，包括包括漂移区的半导体本体和与漂移区相邻布置的栅极; 以及设置在所述半导体主体的漂移区上方并且具有第一金属层，在所述第一金属层上方的粘合层和所述粘附层上的第二金属层的接触结构。