公开(公告)号：US10930770B2

公开(公告)日：2021-02-23

申请号：US15998630

申请日：2018-08-16

Applicant: Infineon Technologies AG

Inventor： Hans-Guenter Eckel ,  Quang Tien Tran

IPC: H01L29/739 ,  H01L29/78 ,  H01L29/861 ,  H01L29/06 ,  H01L29/10 ,  H01L29/872 ,  H01L29/08 ,  H01L29/423

Abstract: A power semiconductor device includes a semiconductor body, a first load terminal structure arranged at a front side of the semiconductor body, and a second load terminal structure arranged at a back side of the semiconductor body, and configured for controlling a load current between the load terminal structures by means of at least one transistor cell. The at least one transistor cell is at least partially included in the semiconductor body and electrically connected to the first load terminal structure on one side and to a drift region on the other side, the drift region being of a first conductivity type. The semiconductor body further includes: a transistor short region of the first conductivity type, wherein a transition between the transistor short region and the first load terminal structure forms a Schottky contact; and a separation region of a second conductivity type separating the transistor short and drift regions.

公开(公告)号：US20190058057A1

公开(公告)日：2019-02-21

申请号：US15998630

申请日：2018-08-16

Applicant: Infineon Technologies AG

Inventor： Hans-Guenter Eckel ,  Quang Tien Tran

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/10 ,  H01L29/872

Abstract: A power semiconductor device includes a semiconductor body, a first load terminal structure arranged at a front side of the semiconductor body, and a second load terminal structure arranged at a back side of the semiconductor body, and configured for controlling a load current between the load terminal structures by means of at least one transistor cell. The at least one transistor cell is at least partially included in the semiconductor body and electrically connected to the first load terminal structure on one side and to a drift region on the other side, the drift region being of a first conductivity type. The semiconductor body further includes: a transistor short region of the first conductivity type, wherein a transition between the transistor short region and the first load terminal structure forms a Schottky contact; and a separation region of a second conductivity type separating the transistor short and drift regions.