公开(公告)号：US20160240644A1

公开(公告)日：2016-08-18

申请号：US15043476

申请日：2016-02-12

Applicant: Infineon Technologies AG

Inventor： Marten Müller ,  Hans-Guenter Eckel

IPC: H01L29/74 ,  H01L29/66

CPC classification number: H01L27/0727 ,  H01L29/8611 ,  H01L29/8613

Abstract: A semiconductor device includes a first transistor structure including a first transistor body region of a first conductivity type located within a semiconductor substrate. At least part of the first transistor body region is located between a first source/drain region of the first transistor structure and a second source/drain region of the first transistor structure. The semiconductor device includes a second transistor structure including a second transistor body region of a second conductivity type located within the semiconductor substrate. At least part of the second transistor body region is located between a first source/drain region of the second transistor structure and a second source/drain region of the second transistor structure. At least part of the second source/drain region of the second transistor structure is located between a doping region comprising the second source/drain region of the first transistor structure and the second transistor body region.

Abstract translation: 半导体器件包括第一晶体管结构，其包括位于半导体衬底内的第一导电类型的第一晶体管本体区域。 第一晶体管体区域的至少一部分位于第一晶体管结构的第一源极/漏极区域和第一晶体管结构的第二源极/漏极区域之间。 半导体器件包括第二晶体管结构，其包括位于半导体衬底内的第二导电类型的第二晶体管本体区域。 第二晶体管体区域的至少一部分位于第二晶体管结构的第一源极/漏极区域和第二晶体管结构的第二源极/漏极区域之间。 第二晶体管结构的第二源极/漏极区域的至少一部分位于包括第一晶体管结构的第二源/漏区域和第二晶体管本体区域的掺杂区域之间。

公开(公告)号：US20250006825A1

公开(公告)日：2025-01-02

申请号：US18754542

申请日：2024-06-26

Applicant: Infineon Technologies AG

Inventor： Hans-Guenter Eckel

IPC: H01L29/739 ,  H01L27/07 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66

Abstract: An RC IGBT includes, in a single chip, an active region configured to conduct both a forward load current and a reverse load current between a first load terminal at a front side of a semiconductor body of the RC IGBT and a second load terminal at a back side of the semiconductor body. The active region is separated into at least an IGBT-only region and an RC IGBT region. At least 90% of the IGBT-only region is configured to conduct, based on a first control signal, only the forward load current. At least 90% of the RC IGBT region is configured to conduct the reverse load current and, based on a second control signal, the forward load current.

公开(公告)号：US11588048B2

公开(公告)日：2023-02-21

申请号：US17186281

申请日：2021-02-26

Applicant: Infineon Technologies AG

Inventor： Thomas Basler ,  Hans-Guenter Eckel ,  Jan Fuhrmann ,  Dethard Peters ,  Florian Stoermer

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/40 ,  H01L29/47

Abstract: In an example, a semiconductor device includes an insulated gate transistor cell, a first region (e.g., a drain region and/or a drift region), a cathode region, a second region (e.g., an anode region and/or a separation region), and a source electrode. The insulated gate transistor cell includes a source region and a gate electrode. The source region and the cathode region are in a silicon carbide body. The gate electrode and the cathode region are electrically connected. The cathode region, the source region, and the first region have a first conductivity type. The second region has a second conductivity type and is between the cathode region and the first region. The source electrode and the source region are electrically connected. The source electrode and the second region are in contact with each other. A rectifying junction is electrically coupled between the source electrode and the cathode region.

公开(公告)号：US20190058057A1

公开(公告)日：2019-02-21

申请号：US15998630

申请日：2018-08-16

Applicant: Infineon Technologies AG

Inventor： Hans-Guenter Eckel ,  Quang Tien Tran

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/10 ,  H01L29/872

Abstract: A power semiconductor device includes a semiconductor body, a first load terminal structure arranged at a front side of the semiconductor body, and a second load terminal structure arranged at a back side of the semiconductor body, and configured for controlling a load current between the load terminal structures by means of at least one transistor cell. The at least one transistor cell is at least partially included in the semiconductor body and electrically connected to the first load terminal structure on one side and to a drift region on the other side, the drift region being of a first conductivity type. The semiconductor body further includes: a transistor short region of the first conductivity type, wherein a transition between the transistor short region and the first load terminal structure forms a Schottky contact; and a separation region of a second conductivity type separating the transistor short and drift regions.

公开(公告)号：US10930770B2

公开(公告)日：2021-02-23

申请号：US15998630

申请日：2018-08-16

Applicant: Infineon Technologies AG

Inventor： Hans-Guenter Eckel ,  Quang Tien Tran

IPC: H01L29/739 ,  H01L29/78 ,  H01L29/861 ,  H01L29/06 ,  H01L29/10 ,  H01L29/872 ,  H01L29/08 ,  H01L29/423

Abstract: A power semiconductor device includes a semiconductor body, a first load terminal structure arranged at a front side of the semiconductor body, and a second load terminal structure arranged at a back side of the semiconductor body, and configured for controlling a load current between the load terminal structures by means of at least one transistor cell. The at least one transistor cell is at least partially included in the semiconductor body and electrically connected to the first load terminal structure on one side and to a drift region on the other side, the drift region being of a first conductivity type. The semiconductor body further includes: a transistor short region of the first conductivity type, wherein a transition between the transistor short region and the first load terminal structure forms a Schottky contact; and a separation region of a second conductivity type separating the transistor short and drift regions.