公开(公告)号：US20240072040A1

公开(公告)日：2024-02-29

申请号：US17821615

申请日：2022-08-23

Applicant: Infineon Technologies AG

Inventor： Valentyn Solomko ,  Semen Syroiezhin ,  Mirko Scholz

IPC: H01L27/02 ,  H02H9/04

CPC classification number: H01L27/0288 ,  H01L27/0255 ,  H01L27/0266 ,  H02H9/04

Abstract: An RF switch device includes transistors coupled in series forming an RF conductive current path; a first resistive bias network forming a DC conductive bias path between gate nodes of the plurality of transistors; and a first ESD bias component coupled between the RF conductive current path and the first resistive bias network, wherein the first ESD bias component provides a DC conductive path between the RF conductive current path of the RF switch device and the first resistive bias network during an ESD event.

公开(公告)号：US20250141219A1

公开(公告)日：2025-05-01

申请号：US18931784

申请日：2024-10-30

Applicant: Infineon Technologies AG

Inventor： Mirko Scholz ,  Steffen Schumann ,  Gernot Langguth ,  Adrien Benoit Ille

IPC: H02H9/04

Abstract: In accordance with an embodiment, a device includes: a first supply rail; a second supply rail; an input/output terminal; an electrostatic discharge protection device comprising at least two stacked transistors coupled between the input/output terminal and a first one of the first supply rail or the second supply rail; and a trigger circuit coupled to the first supply rail and the second supply rail and configured to: detect an electrostatic discharge event at the input/output terminal based on a voltage of the first supply rail or a voltage of the second supply rail, and switch on the electrostatic discharge protection device in response to detecting the electrostatic discharge event.

公开(公告)号：US11967639B2

公开(公告)日：2024-04-23

申请号：US17648985

申请日：2022-01-26

Applicant: Infineon Technologies AG

Inventor： Gernot Langguth ,  Anton Boehm ,  Christian Cornelius Russ ,  Mirko Scholz

IPC: H01L29/74 ,  H01L27/02 ,  H01L29/06 ,  H02H9/04

CPC classification number: H01L29/7436 ,  H01L27/0259 ,  H01L29/0692 ,  H02H9/046 ,  H01L27/0285 ,  H01L27/0292 ,  H01L29/7408

Abstract: In accordance with an embodiment, a semiconductor device includes: an n-doped region disposed over an insulating layer; a p-doped region disposed over the insulating layer adjacent to the n-doped region, where an interface between the n-doped region and the p-doped region form a first diode junction; a plurality of segmented p-type anode regions disposed over the insulating layer, each of the plurality of segmented p-type anode regions being surrounded by the n-doped region, where a doping concentration of the plurality of segmented p-type anode regions is greater than a doping concentration of the p-doped region; and a plurality of segmented n-type cathode regions disposed over the insulating layer. Each of the plurality of segmented n-type cathode regions are surrounded by the p-doped region, where a doping concentration of the plurality of segmented n-type cathode regions is greater than a doping concentration of the n-doped region.

公开(公告)号：US11990468B2

公开(公告)日：2024-05-21

申请号：US17821615

申请日：2022-08-23

Applicant: Infineon Technologies AG

Inventor： Valentyn Solomko ,  Semen Syroiezhin ,  Mirko Scholz

IPC: H01L27/02 ,  H02H9/04

CPC classification number: H01L27/0288 ,  H01L27/0255 ,  H01L27/0266 ,  H02H9/04

Abstract: An RF switch device includes transistors coupled in series forming an RF conductive current path; a first resistive bias network forming a DC conductive bias path between gate nodes of the plurality of transistors; and a first ESD bias component coupled between the RF conductive current path and the first resistive bias network, wherein the first ESD bias component provides a DC conductive path between the RF conductive current path of the RF switch device and the first resistive bias network during an ESD event.

公开(公告)号：US20230238454A1

公开(公告)日：2023-07-27

申请号：US17648985

申请日：2022-01-26

Applicant: Infineon Technologies AG

Inventor： Gernot Langguth ,  Anton Boehm ,  Christian Cornelius Russ ,  Mirko Scholz

IPC: H01L29/74 ,  H01L27/02 ,  H01L29/06 ,  H02H9/04

CPC classification number: H01L29/7436 ,  H01L27/0259 ,  H01L29/0692 ,  H02H9/046 ,  H01L29/7408 ,  H01L27/0285 ,  H01L27/0292

Abstract: In accordance with an embodiment, a semiconductor device includes: an n-doped region disposed over an insulating layer; a p-doped region disposed over the insulating layer adjacent to the n-doped region, where an interface between the n-doped region and the p-doped region form a first diode junction; a plurality of segmented p-type anode regions disposed over the insulating layer, each of the plurality of segmented p-type anode regions being surrounded by the n-doped region, where a doping concentration of the plurality of segmented p-type anode regions is greater than a doping concentration of the p-doped region; and a plurality of segmented n-type cathode regions disposed over the insulating layer. Each of the plurality of segmented n-type cathode regions are surrounded by the p-doped region, where a doping concentration of the plurality of segmented n-type cathode regions is greater than a doping concentration of the n-doped region.