公开(公告)号：US10446469B2

公开(公告)日：2019-10-15

申请号：US15217383

申请日：2016-07-22

申请人： Infineon Technologies AG

发明人： Thomas Detzel ,  Johann Gross ,  Robert Illing ,  Maximilian Krug ,  Sven Gustav Lanzerstorfer ,  Michael Nelhiebel ,  Werner Robl ,  Michael Rogalli ,  Stefan Woehlert

IPC分类号： H01L23/00 ,  H01L23/373 ,  H01L23/532 ,  H01L21/288 ,  H01L21/48

摘要： A semiconductor device includes a base element and a copper element over the base element. The copper element includes a layer stack having at least two copper layers and at least one intermediate conductive layer of a material different from copper. The at least two copper layers and the at least one intermediate conductive layer are alternately stacked over each other.

公开(公告)号：US20160329263A1

公开(公告)日：2016-11-10

申请号：US15217383

申请日：2016-07-22

申请人： Infineon Technologies AG

发明人： Thomas Detzel ,  Johann Gross ,  Robert Illing ,  Maximilian Krug ,  Sven Gustav Lanzerstorfer ,  Michael Nelhiebel ,  Werner Robl ,  Michael Rogalli ,  Stefan Woehlert

IPC分类号： H01L23/373 ,  H01L21/48

CPC分类号： H01L23/3735 ,  H01L21/2885 ,  H01L21/4882 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a base element and a copper element over the base element. The copper element includes a layer stack having at least two copper layers and at least one intermediate conductive layer of a material different from copper. The at least two copper layers and the at least one intermediate conductive layer are alternately stacked over each other.

摘要翻译： 半导体器件包括在基底元件上的基底元件和铜元件。 铜元件包括具有至少两个铜层的层堆叠和至少一个不同于铜的材料的中间导电层。 所述至少两个铜层和所述至少一个中间导电层彼此交替堆叠。