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公开(公告)号：US20240312663A1
公开(公告)日：2024-09-19
申请号：US18605203
申请日：2024-03-14
IPC分类号： G21K1/00
CPC分类号： G21K1/003
摘要： A device for controlling trapped ions includes a substrate. A metal layer is disposed over the substrate. An electrode of an ion trap is disposed over the metal layer, the electrode being configured to trap one or more ions in a space above the electrode. An electrical insulator is disposed between the metal layer and the electrode. The electrical insulator has an upper surface facing towards the electrode and a lower surface facing towards the metal layer. An etching rate of the electrical insulator increases along a direction pointing from the upper surface to the lower surface.
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公开(公告)号：US20240242951A1
公开(公告)日：2024-07-18
申请号：US18404400
申请日：2024-01-04
发明人： Clemens Rössler , Jakob Wahl , Klemens Karl Heinrich Schüppert , Alexander Zesar , Sarah Winkler
IPC分类号： H01J49/02
CPC分类号： H01J49/02
摘要： A micro-fabricated device for controlling trapped ions includes a first substrate having a main surface. A structured first metal layer is disposed over the main surface of the first substrate. The structured first metal layer includes electrodes of at least one ion trapping zone configured to trap an ion in a space above the structured first metal layer. A dielectric element is fixedly attached to the first substrate. The dielectric element includes at least one laser light path and a surface covered with a layer. The layer is an electrically conductive layer. The layer is optically transparent for the laser light. The layer is arranged between the at least one laser light path and the at least one ion trapping zone.
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公开(公告)号：US20230273074A1
公开(公告)日：2023-08-31
申请号：US18071037
申请日：2022-11-29
发明人： Matthias German Dietl , Silke Katharina Auchter , Sebastian Ludwig Habicht , Lina Purwin , Clemens Rössler , Michael Sieberer , Alexander Zesar
CPC分类号： G01K7/18 , H01J49/422 , H01J49/4255
摘要： A device for controlling trapped ions includes a substrate. An electrode structure is mounted on the substrate. The electrode structure includes DC electrodes and RF electrodes of an ion trap configured to trap ions in a space above the substrate. A temperature sensor is disposed at the substrate and configured to sense temperatures below 50K.
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公开(公告)号：US20230094771A1
公开(公告)日：2023-03-30
申请号：US17953455
申请日：2022-09-27
发明人： Alexander Zesar , Silke Katharina Auchter , Matthias German Dietl , Peter Oles , Lina Purwin , Clemens Rössler , Helmut Heinrich Schoenherr
摘要： A device for controlling trapped ions includes a substrate. A first metal layer is disposed over the substrate. An insulating layer is disposed over the first metal layer. A structured second metal layer is disposed over the insulating layer. The structured second metal layer includes an electrode of an ion trap configured to trap ions in a space above the structured second metal layer. The electrode of the structured second metal layer and the first metal layer overlap each other. The device further includes a void space in the insulating layer between the first metal layer and the electrode of the structured second metal layer, the void space including a vacuum at least during operation of the device.
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公开(公告)号：US20240312664A1
公开(公告)日：2024-09-19
申请号：US18211908
申请日：2023-06-20
摘要： A device for controlling trapped ions includes a first substrate and a second substrate spaced apart from the first substrate. The device further includes at least one ion trap configured to trap an ion in a space between the first substrate and the second substrate. DC electrodes of the ion trap are formed on the first substrate. RF electrodes of the ion trap are formed on the second substrate and not on the first substrate.
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公开(公告)号：US20230102515A1
公开(公告)日：2023-03-30
申请号：US17953411
申请日：2022-09-27
发明人： Lina Purwin , Silke Katharina Auchter , Matthias German Dietl , Johann Gabric , Clemens Rössler , Stefan Woehlert , Alexander Zesar
摘要： A device for controlling trapped ions includes a substrate. A structured first metal layer is disposed over the substrate. The structured first metal layer forms electrodes of an ion trap configured to trap ions in a space above the structured first metal layer. The structured first metal layer is formed of a multilayer stack. The multilayer stack includes an electrically conductive layer of a first material and a mechanical stabilization layer of a second material. The second material has an elastic modulus greater than the elastic modulus of the first material and/or the second material has a yield strength greater than the yield strength of the first material.
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