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公开(公告)号：US20240288213A1
公开(公告)日：2024-08-29
申请号：US18437366
申请日：2024-02-09
发明人： Clemens Rössler , Klemens Karl Heinrich Schüppert , Matthias German Dietl , Yves Colombe , Silke Katharina Auchter
CPC分类号： F25D19/006 , G21K1/003
摘要： A cryostat socket for holding an ion trap device mounted on a substrate in a cryostat includes a frame having a heat removal surface configured to be thermally coupled to a laterally outer region of the device carrier. The cryostat socket further includes a cover configured to exert a compressive force on the front side of the device carrier when assembled with the frame, by which the rear side of the device carrier is thermally coupled to the heat removal surface.
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公开(公告)号：US20230273074A1
公开(公告)日：2023-08-31
申请号：US18071037
申请日：2022-11-29
发明人： Matthias German Dietl , Silke Katharina Auchter , Sebastian Ludwig Habicht , Lina Purwin , Clemens Rössler , Michael Sieberer , Alexander Zesar
CPC分类号： G01K7/18 , H01J49/422 , H01J49/4255
摘要： A device for controlling trapped ions includes a substrate. An electrode structure is mounted on the substrate. The electrode structure includes DC electrodes and RF electrodes of an ion trap configured to trap ions in a space above the substrate. A temperature sensor is disposed at the substrate and configured to sense temperatures below 50K.
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公开(公告)号：US20230094771A1
公开(公告)日：2023-03-30
申请号：US17953455
申请日：2022-09-27
发明人： Alexander Zesar , Silke Katharina Auchter , Matthias German Dietl , Peter Oles , Lina Purwin , Clemens Rössler , Helmut Heinrich Schoenherr
摘要： A device for controlling trapped ions includes a substrate. A first metal layer is disposed over the substrate. An insulating layer is disposed over the first metal layer. A structured second metal layer is disposed over the insulating layer. The structured second metal layer includes an electrode of an ion trap configured to trap ions in a space above the structured second metal layer. The electrode of the structured second metal layer and the first metal layer overlap each other. The device further includes a void space in the insulating layer between the first metal layer and the electrode of the structured second metal layer, the void space including a vacuum at least during operation of the device.
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公开(公告)号：US20240242959A1
公开(公告)日：2024-07-18
申请号：US18541778
申请日：2023-12-15
IPC分类号： H01J49/42
CPC分类号： H01J49/424 , H01J49/429
摘要： A micro-fabricated device for controlling trapped ions includes a substrate of a dielectric material or a semiconductor material. A structured electrode layer is disposed above the substrate. The structured electrode layer forms a plurality of electrodes of an ion trap configured to trap ions in a space above the structured electrode layer. The structured electrode layer includes a low phonon density of states layer, referred to as low-PDOS layer, the low-PDOS layer being of TiN or TiW or Ti or W and having a thickness of equal to or greater than 100 nm.
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公开(公告)号：US20240127981A1
公开(公告)日：2024-04-18
申请号：US18486273
申请日：2023-10-13
申请人： Infineon Technologies Austria AG. , Joanneum Research Forschungsgesellschaft mbH , Universität Innsbruck
IPC分类号： G21K1/00
CPC分类号： G21K1/003
摘要： A micro-fabricated device for controlling trapped ions includes a first substrate having a main surface. A structured first metal layer is disposed over the main surface of the first substrate. The structured first metal layer includes electrodes of at least one ion trapping zone configured to trap an ion in a space above the structured first metal layer. A dielectric element is fixedly attached to the first substrate. The dielectric element includes at least one short-pulse-laser direct written (SPLDW) waveguide configured to direct laser light towards an ion trapped in the at least one ion trapping zone.
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公开(公告)号：US20240312664A1
公开(公告)日：2024-09-19
申请号：US18211908
申请日：2023-06-20
摘要： A device for controlling trapped ions includes a first substrate and a second substrate spaced apart from the first substrate. The device further includes at least one ion trap configured to trap an ion in a space between the first substrate and the second substrate. DC electrodes of the ion trap are formed on the first substrate. RF electrodes of the ion trap are formed on the second substrate and not on the first substrate.
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公开(公告)号：US20230102515A1
公开(公告)日：2023-03-30
申请号：US17953411
申请日：2022-09-27
发明人： Lina Purwin , Silke Katharina Auchter , Matthias German Dietl , Johann Gabric , Clemens Rössler , Stefan Woehlert , Alexander Zesar
摘要： A device for controlling trapped ions includes a substrate. A structured first metal layer is disposed over the substrate. The structured first metal layer forms electrodes of an ion trap configured to trap ions in a space above the structured first metal layer. The structured first metal layer is formed of a multilayer stack. The multilayer stack includes an electrically conductive layer of a first material and a mechanical stabilization layer of a second material. The second material has an elastic modulus greater than the elastic modulus of the first material and/or the second material has a yield strength greater than the yield strength of the first material.
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8.发明公开公开(公告)号：US20240347223A1
公开(公告)日：2024-10-17
申请号：US18577566
申请日：2022-07-12
申请人： Infineon Technologies Austria AG , Eidgenössische Technische Hochschule - ETH Zürich , Universitat Innsbruck
发明人： Clemens Rössler , Silke Auchter , Gerald Stocker , Sokratis Sgouridis , Chiara Decaroli , Jonathan Home , Marco Valentini , Yves Colombe , Philip Holz
IPC分类号： G21K1/00
CPC分类号： G21K1/00
摘要： A device (100) for controlling trapped ions (180) includes a first semiconductor substrate (120) comprising a semiconductor and/or dielectric material. A first micro-fabricated electrode structure (125) is disposed at a main side of the first substrate (120). The device (100) further includes a second substrate (140) comprising a semiconductor and/or dielectric material. A second micro-fabricated electrode structure (145) is disposed at a main side of the second substrate (140) opposite the main side of the first substrate (120). A plurality of spacer members (160) is disposed between the first substrate (120) and the second substrate (140). At least one ion trap is configured to trap ions (180) in a space between the first substrate (120) and the second substrate (140). The first micro-fabricated electrode structure (125) and the second micro-fabricated electrode structure (145) comprise electrodes of the ion trap. A multi-layer metal interconnect (135) is formed on the first substrate (120) and electrically connected to the first micro-fabricated electrode structure (125).
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公开(公告)号：US20240312663A1
公开(公告)日：2024-09-19
申请号：US18605203
申请日：2024-03-14
IPC分类号： G21K1/00
CPC分类号： G21K1/003
摘要： A device for controlling trapped ions includes a substrate. A metal layer is disposed over the substrate. An electrode of an ion trap is disposed over the metal layer, the electrode being configured to trap one or more ions in a space above the electrode. An electrical insulator is disposed between the metal layer and the electrode. The electrical insulator has an upper surface facing towards the electrode and a lower surface facing towards the metal layer. An etching rate of the electrical insulator increases along a direction pointing from the upper surface to the lower surface.
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公开(公告)号：US20240249932A1
公开(公告)日：2024-07-25
申请号：US18409885
申请日：2024-01-11
IPC分类号： H01J49/42
CPC分类号： H01J49/4255 , H01J49/424
摘要： A micro-fabricated device for controlling trapped ions includes a substrate. A structured electrode layer is disposed over the substrate. The structured electrode layer forms a plurality of electrodes of an ion trap configured to trap ions in a space above the structured electrode layer. The structured electrode layer is formed of a multilayer stack. The multilayer stack includes an electrically conductive smoothing layer having a planarized surface and an electrically conductive top layer disposed over the planarized surface of the smoothing layer. The top layer provides an exposed surface of the structured electrode layer, the exposed surface having a mean surface roughness equal to or less than Ra=5 nm.
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