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公开(公告)号：US20240250678A1
公开(公告)日：2024-07-25
申请号：US18410360
申请日：2024-01-11
IPC分类号： H03K17/081 , H01L27/02 , H01L29/78 , H01L29/94
CPC分类号： H03K17/08104 , H01L27/0266 , H01L27/0288 , H01L28/20 , H01L29/7813 , H01L29/945
摘要： An electronic circuit and a method are disclosed. The electronic circuit includes: a first transistor device having a first drive node, a second drive node, and a load path; and a protection circuit coupled to the first and second drive nodes and the load path of the first transistor device. The protection circuit includes a second transistor device having a first drive node, a second drive node, and a load path connected between the first and second drive nodes of the first transistor device, and a capacitor coupled between the load path of the first transistor device and the first drive node of the second transistor device. A capacitance of the capacitor is voltage dependent such that the capacitance decreases as a voltage across the capacitor increases.
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公开(公告)号：US20240055490A1
公开(公告)日：2024-02-15
申请号：US18226321
申请日：2023-07-26
IPC分类号： H01L29/40 , H01L23/522 , H01L21/768
CPC分类号： H01L29/407 , H01L29/401 , H01L23/5226 , H01L21/768
摘要： The present application relates to a semiconductor device, including: a field electrode in a needle-shaped field electrode trench extending from a frontside of a semiconductor body into the semiconductor body; a lower metallization layer on the frontside of the semiconductor body and electrically connected to the field electrode; an insulating layer on the lower metallization layer; an upper metallization layer on the insulating layer, and a first interconnect electrically connecting the lower metallization layer to the upper metallization layer. The first interconnect is laterally offset to the field electrode trench. The lower metallization layer is not connected to the upper metallization layer in a region vertically above the field electrode trench.
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公开(公告)号：US20240313105A1
公开(公告)日：2024-09-19
申请号：US18603270
申请日：2024-03-13
IPC分类号： H01L29/78 , H01L21/762 , H01L23/528 , H01L29/08 , H01L29/66
CPC分类号： H01L29/7804 , H01L21/76224 , H01L23/528 , H01L29/0878 , H01L29/66712
摘要： The disclosure relates to a semiconductor die with a semiconductor body. The semiconductor die includes a vertical transistor device formed in a first area of the semiconductor body. The vertical transistor device includes a source region at a first side of the semiconductor body and a drain region at a second side of the semiconductor body. The semiconductor die further includes a first electrical isolation between the first area and a second area of the semiconductor body, and a diode in the second area of the semiconductor body. A cathode contact of the diode is electrically connected to the source region of the vertical transistor device.
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4.发明公开公开(公告)号：US20240030111A1
公开(公告)日：2024-01-25
申请号：US18351170
申请日：2023-07-12
IPC分类号： H01L23/495 , H01L21/56 , H01L23/12
CPC分类号： H01L23/49575 , H01L21/565 , H01L23/49562 , H01L23/12 , H01L23/49503 , H01L23/49537
摘要： A semiconductor package includes low voltage and high voltage contact pads, an output contact pad, a half-bridge circuit, and first, second and third leads. The half bridge circuit includes first and second transistor devices coupled in series at an output node. Both transistor devices have a first major surface which extends substantially perpendicularly to the low voltage contact pad, the high voltage contact pad, and the output contact pad. Both transistor devices are arranged in a device portion of the package and are mounted on a first lead, the first lead providing the output contact pad and being arranged on a first side of the device portion. The second and third leads are arranged in a common plane on a second side of the device portion that opposes the first side. The second lead provides the low voltage pad and the third second lead provides the high voltage output pad.
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