公开(公告)号：US10199514B2

公开(公告)日：2019-02-05

申请号：US15865976

申请日：2018-01-09

申请人： Infineon Technologies Austria AG

发明人： Jens Peter Konrath ,  Ronny Kern ,  Stefan Krivec ,  Ulrich Schmid ,  Laura Stoeber

IPC分类号： H01L29/872 ,  H01L29/16 ,  H01L21/04 ,  H01L29/66 ,  H01L29/868 ,  H01L29/06 ,  H01L29/20

摘要： An embodiment of a method of manufacturing a semiconductor device includes providing a semiconductor material that comprises SiC and forming an electrically conductive contact layer on the semiconductor material. A non-ohmic contact is formed between the semiconductor material and the electrically conductive contact layer. The electrically conductive contact layer comprises a metal nitride with a nitrogen content between 10 to 50 atomic %. Additional embodiments of manufacturing a semiconductor device are described.

公开(公告)号：US20190140111A1

公开(公告)日：2019-05-09

申请号：US16238213

申请日：2019-01-02

申请人： Infineon Technologies Austria AG

发明人： Jens Peter Konrath ,  Ronny Kern ,  Stefan Krivec ,  Ulrich Schmid ,  Laura Stoeber

IPC分类号： H01L29/872 ,  H01L29/868 ,  H01L21/04 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66

CPC分类号： H01L29/872 ,  H01L21/0495 ,  H01L29/0619 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/6606 ,  H01L29/868

摘要： According to an embodiment of a semiconductor device, the semiconductor device includes a contact layer in contact with SiC material. The contact layer includes a metal nitride having a nitrogen content in a range of 10 to 50 atomic %. The semiconductor device further includes a non-ohmic contact formed between the SiC material and the contact layer.

公开(公告)号：US10431698B2

公开(公告)日：2019-10-01

申请号：US16238213

申请日：2019-01-02

申请人： Infineon Technologies Austria AG

发明人： Jens Peter Konrath ,  Ronny Kern ,  Stefan Krivec ,  Ulrich Schmid ,  Laura Stoeber

IPC分类号： H01L29/872 ,  H01L29/16 ,  H01L21/04 ,  H01L29/66 ,  H01L29/868 ,  H01L29/06 ,  H01L29/20

摘要： According to an embodiment of a semiconductor device, the semiconductor device includes a contact layer in contact with SiC material. The contact layer includes a metal nitride having a nitrogen content in a range of 10 to 50 atomic %. The semiconductor device further includes a non-ohmic contact formed between the SiC material and the contact layer.

公开(公告)号：US20180158964A1

公开(公告)日：2018-06-07

申请号：US15865976

申请日：2018-01-09

申请人： Infineon Technologies Austria AG

发明人： Jens Peter Konrath ,  Ronny Kern ,  Stefan Krivec ,  Ulrich Schmid ,  Laura Stoeber

IPC分类号： H01L29/872 ,  H01L29/868 ,  H01L29/66 ,  H01L29/16 ,  H01L29/06 ,  H01L21/04 ,  H01L29/20

CPC分类号： H01L29/872 ,  H01L21/0495 ,  H01L29/0619 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/6606 ,  H01L29/868

摘要： An embodiment of a method of manufacturing a semiconductor device includes providing a semiconductor material that comprises SiC and forming an electrically conductive contact layer on the semiconductor material. A non-ohmic contact is formed between the semiconductor material and the electrically conductive contact layer. The electrically conductive contact layer comprises a metal nitride with a nitrogen content between 10 to 50 atomic %. Additional embodiments of manufacturing a semiconductor device are described.

公开(公告)号：US20160276452A1

公开(公告)日：2016-09-22

申请号：US15040353

申请日：2016-02-10

申请人： Infineon Technologies Austria AG

发明人： Jens Peter Konrath ,  Ronny Kern ,  Stefan Krivec ,  Ulrich Schmid ,  Laura Stoeber

IPC分类号： H01L29/47 ,  H01L29/20 ,  H01L29/16 ,  H01L29/161 ,  H01L21/02 ,  H01L21/285

摘要： A semiconductor device includes an n-doped monocrystalline semiconductor substrate having a substrate surface, an amorphous n-doped semiconductor surface layer at the substrate surface of the n-doped monocrystalline semiconductor substrate, and a Schottky-junction forming material in contact with the amorphous n-doped semiconductor surface layer. The Schottky-junction forming material forms at least one Schottky contact with the amorphous n-doped semiconductor surface layer.

摘要翻译： 半导体器件包括具有衬底表面的n掺杂单晶半导体衬底，在n掺杂单晶半导体衬底的衬底表面处的非晶n掺杂半导体表面层和与非晶n相接触的肖特基结形成材料 掺杂的半导体表面层。 肖特基结形成材料与非晶n掺杂半导体表面层形成至少一个肖特基接触。

公开(公告)号：US10763339B2

公开(公告)日：2020-09-01

申请号：US15040353

申请日：2016-02-10

申请人： Infineon Technologies Austria AG

发明人： Jens Peter Konrath ,  Ronny Kern ,  Stefan Krivec ,  Ulrich Schmid ,  Laura Stoeber

IPC分类号： H01L29/872 ,  H01L29/47 ,  H01L21/302 ,  H01L21/3065 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66 ,  H01L21/02 ,  H01L21/285 ,  H01L29/16 ,  H01L29/161 ,  H01L21/04 ,  H01L29/20

摘要： A semiconductor device includes an n-doped monocrystalline semiconductor substrate having a substrate surface, an amorphous n-doped semiconductor surface layer at the substrate surface of the n-doped monocrystalline semiconductor substrate, and a Schottky-junction forming material in contact with the amorphous n-doped semiconductor surface layer. The Schottky-junction forming material forms at least one Schottky contact with the amorphous n-doped semiconductor surface layer.

公开(公告)号：US20160181441A1

公开(公告)日：2016-06-23

申请号：US14971823

申请日：2015-12-16

申请人： Infineon Technologies Austria AG

发明人： Jens Peter Konrath ,  Ronny Kern ,  Stefan Krivec ,  Ulrich Schmid ,  Laura Stoeber

IPC分类号： H01L29/872 ,  H01L29/66 ,  H01L29/16

CPC分类号： H01L29/872 ,  H01L21/0495 ,  H01L29/0619 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/6606 ,  H01L29/868

摘要： A semiconductor device includes a semiconductor material having a bandgap larger than 2 eV and less than 10 eV, and a contact layer in contact with the semiconductor material. The contact layer includes a metal nitride. A non-ohmic contact is formed between the semiconductor material and the contact layer.

摘要翻译： 半导体器件包括具有大于2eV且小于10eV的带隙的半导体材料以及与半导体材料接触的接触层。 接触层包括金属氮化物。 在半导体材料和接触层之间形成非欧姆接触。