公开(公告)号：US20060211253A1

公开(公告)日：2006-09-21

申请号：US11081439

申请日：2005-03-16

Applicant: Ing-shin Chen ,  Jeffrey Neuner

Inventor： Ing-shin Chen ,  Jeffrey Neuner

IPC: H01L21/302 ,  G01L21/30 ,  C23F1/00

CPC classification number: B81C1/00587 ,  B81C99/0065 ,  B81C2201/0138 ,  C23C16/4405 ,  G01N27/16 ,  H01J37/32935

Abstract: The present invention relates to a method and system of using downstream sensor elements for determining the plasma conditions (e.g., plasma etching end point) in a semiconductor etching facility that utilizes halogen-containing plasma and/or oxygen-containing plasma. Such sensor elements are capable of exhibiting temperature change in the presence of energetic gas species, e.g., fluorine, chlorine, iodine, bromine, oxygen, and derivatives and radicals thereof that are generated by the plasma, and correspondingly generating an output signal indicative of such temperature change for determination of the plasma conditions in the etching plasma processing facility.

Abstract translation: 本发明涉及使用下游传感器元件来确定半导体蚀刻设备中利用含卤素等离子体和/或含氧等离子体的等离子体条件（例如，等离子体蚀刻终点）的方法和系统。 这样的传感器元件能够在由等离子体产生的能量气体物质例如氟，氯，碘，溴，氧及其衍生物和自由基的存在下表现出温度变化，并且相应地产生指示其的输出信号 用于确定蚀刻等离子体处理设备中的等离子体条件的温度变化。