公开(公告)号：US20060211253A1

公开(公告)日：2006-09-21

申请号：US11081439

申请日：2005-03-16

Applicant: Ing-shin Chen ,  Jeffrey Neuner

Inventor： Ing-shin Chen ,  Jeffrey Neuner

IPC: H01L21/302 ,  G01L21/30 ,  C23F1/00

CPC classification number: B81C1/00587 ,  B81C99/0065 ,  B81C2201/0138 ,  C23C16/4405 ,  G01N27/16 ,  H01J37/32935

Abstract: The present invention relates to a method and system of using downstream sensor elements for determining the plasma conditions (e.g., plasma etching end point) in a semiconductor etching facility that utilizes halogen-containing plasma and/or oxygen-containing plasma. Such sensor elements are capable of exhibiting temperature change in the presence of energetic gas species, e.g., fluorine, chlorine, iodine, bromine, oxygen, and derivatives and radicals thereof that are generated by the plasma, and correspondingly generating an output signal indicative of such temperature change for determination of the plasma conditions in the etching plasma processing facility.

Abstract translation: 本发明涉及使用下游传感器元件来确定半导体蚀刻设备中利用含卤素等离子体和/或含氧等离子体的等离子体条件（例如，等离子体蚀刻终点）的方法和系统。 这样的传感器元件能够在由等离子体产生的能量气体物质例如氟，氯，碘，溴，氧及其衍生物和自由基的存在下表现出温度变化，并且相应地产生指示其的输出信号 用于确定蚀刻等离子体处理设备中的等离子体条件的温度变化。

公开(公告)号：US20050199496A1

公开(公告)日：2005-09-15

申请号：US11057594

申请日：2005-02-14

Applicant: Frank Dimeo ,  Philip Chen ,  Jeffrey Neuner ,  James Welch ,  Michele Stawasz ,  Thomas Baum ,  Mackenzie King ,  Ing-Shin Chen ,  Jeffrey Roeder

Inventor： Frank Dimeo ,  Philip Chen ,  Jeffrey Neuner ,  James Welch ,  Michele Stawasz ,  Thomas Baum ,  Mackenzie King ,  Ing-Shin Chen ,  Jeffrey Roeder

IPC: G01N33/00 ,  G01N27/26

CPC classification number: G01N27/128 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32981 ,  Y10T29/49007 ,  Y10T436/17 ,  Y10T436/19

Abstract: A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

Abstract translation: 用于检测含有其的气体中的含氟物质的气体检测器和方法，例如用HF，NF 3等进行蚀刻清洁的半导体加工工具的流出物。优选的检测器 结构布置采用基于微机电系统（MEMS）的器件结构和/或独立的金属元件，其在需要高温感测时用作感测部件并且可选地作为热源。 独立的金属元件可以直接制造在标准芯片载体/器件封装上，使得封装成为检测器的平台。

公开(公告)号：US20050230258A1

公开(公告)日：2005-10-20

申请号：US11057735

申请日：2005-02-14

Applicant: Frank Dimeo ,  Philip Chen ,  Jeffrey Neuner ,  James Welch ,  Michele Stawasz ,  Thomas Baum ,  Mackenzie King ,  Ing-Shin Chen ,  Jeffrey Roeder

Inventor： Frank Dimeo ,  Philip Chen ,  Jeffrey Neuner ,  James Welch ,  Michele Stawasz ,  Thomas Baum ,  Mackenzie King ,  Ing-Shin Chen ,  Jeffrey Roeder

IPC: G01N33/00 ,  C25D5/48 ,  G01N27/26

CPC classification number: G01N27/128 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32981 ,  Y10T29/49007 ,  Y10T436/17 ,  Y10T436/19

Abstract: A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

公开(公告)号：US20060219698A1

公开(公告)日：2006-10-05

申请号：US11440241

申请日：2006-05-24

Applicant: Ing-Shin Chen ,  Jeffrey Neuner ,  Richard Kramer

Inventor： Ing-Shin Chen ,  Jeffrey Neuner ,  Richard Kramer

IPC: H05B1/02

CPC classification number: H05B1/0288

Abstract: A system and method for controlling electrical heating of an element to maintain a constant electrical resistance, by adjusting electrical power supplied to such element according to an adaptive feedback control algorithm, in which all the parameters are (1) arbitrarily selected; (2) pre-determined by the physical properties of the controlled element; or (3) measured in real time. Unlike the conventional proportion-integral-derivative (PID) control mechanism, the system and method of the present invention do not require re-tuning of proportionality constants when used in connection with a different controlled element or under different operating conditions, and are therefore adaptive to changes in the controlled element and the operating conditions.

Abstract translation: 一种用于通过根据自适应反馈控制算法调整提供给这些元件的电力来控制元件的电加热以保持恒定电阻的系统和方法，其中所有参数是（1）任意选择的; （2）由受控元素的物理性质预先确定的; 或（3）实时测量。 与常规比例积分微分（PID）控制机制不同，本发明的系统和方法在与不同的受控元件结合使用时或在不同的操作条件下不需要重新调整比例常数，因此适应性 以控制元件和操作条件的变化。

公开(公告)号：US20050205424A1

公开(公告)日：2005-09-22

申请号：US11057734

申请日：2005-02-14

Applicant: Frank Dimeo ,  Philip Chen ,  Jeffrey Neuner ,  James Welch ,  Michele Stawasz ,  Thomas Baum ,  MacKenzie King ,  Ing-Shin Chen ,  Jeffrey Roeder

Inventor： Frank Dimeo ,  Philip Chen ,  Jeffrey Neuner ,  James Welch ,  Michele Stawasz ,  Thomas Baum ,  MacKenzie King ,  Ing-Shin Chen ,  Jeffrey Roeder

IPC: G01N33/00 ,  G01N27/26

CPC classification number: G01N27/128 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32981 ,  Y10T29/49007 ,  Y10T436/17 ,  Y10T436/19

Abstract: A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

公开(公告)号：US20050173407A1

公开(公告)日：2005-08-11

申请号：US10775473

申请日：2004-02-09

Applicant: Ing-Shin Chen ,  Jeffrey Neuner

Inventor： Ing-Shin Chen ,  Jeffrey Neuner

IPC: H05B1/02

CPC classification number: H05B1/0288

Abstract: The present invention relates to a system and method for controlling electrical heating of an element to maintain a constant electrical resistance, by adjusting electrical power supplied to such element according to an adaptive feedback control algorithm, in which all the parameters are (1) arbitrarily selected; (2) pre-determined by the physical properties of the controlled element; or (3) measured in real time. Unlike the conventional proportion-integral-derivative (PID) control mechanism, the system and method of the present invention do not require re-tuning of proportionality constants when used in connection with a different controlled element or under different operating conditions, and are therefore adaptive to changes in the controlled element and the operating conditions.

Abstract translation: 本发明涉及通过根据自适应反馈控制算法调整提供给这些元件的电力来控制元件的电加热以维持恒定电阻的系统和方法，其中所有参数是（1）任意选择的 ; （2）由受控元素的物理性质预先确定的; 或（3）实时测量。 与常规比例积分微分（PID）控制机制不同，本发明的系统和方法在与不同的受控元件结合使用时或在不同的操作条件下不需要重新调整比例常数，因此适应性 以控制元件和操作条件的变化。

公开(公告)号：US20060086376A1

公开(公告)日：2006-04-27

申请号：US10973673

申请日：2004-10-26

Applicant: Frank Dimeo ,  James Dietz ,  W. Olander ,  Robert Kaim ,  Steven Bishop ,  Jeffrey Neuner

Inventor： Frank Dimeo ,  James Dietz ,  W. Olander ,  Robert Kaim ,  Steven Bishop ,  Jeffrey Neuner

IPC: B08B6/00 ,  B08B9/00

CPC classification number: C23G5/00 ,  C23C14/564 ,  H01J37/08 ,  H01J37/32862 ,  H01J2237/022 ,  H01J2237/31701

Abstract: A method and apparatus for cleaning residue from components of an ion source region of an ion implanter used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive halide composition for sufficient time and under sufficient conditions to at least partially remove the residue. The gas-phase reactive halide composition is chosen to react selectively with the residue, while not reacting with the components of the ion source region or the vacuum chamber.

Abstract translation: 一种用于清洁用于制造微电子器件的离子注入机的离子源区域的组分的残留物的方法和装置。 为了有效地除去残留物，将组分与气相反应性卤化物组合物接触足够的时间并在足够的条件下至少部分地除去残余物。 选择气相反应性卤化物组合物与残余物选择性反应，而不与离子源区域或真空室的组分反应。