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    REMOVAL OF NITRIDE DEPOSITS
    3.
    发明申请
    REMOVAL OF NITRIDE DEPOSITS 审中-公开
    去除硝酸盐沉积物

    公开(公告)号：US20080142039A1

    公开(公告)日：2008-06-19

    申请号：US11956329

    申请日：2007-12-13

    Applicant: Ing-Shin Chen ,  Jeffrey F. Roeder

    Inventor： Ing-Shin Chen ,  Jeffrey F. Roeder

    IPC: C25F1/00 ,  C11D7/26

    CPC classification number: C11D11/0041 ,  C11D7/02 ,  C11D11/007

    Abstract: Compositions, apparatus and methods for removal of unwanted deposited materials, e.g., nitrides such as silicon nitrides, from substrates. In one implementation, such removal is carried out with a composition including (i) a halide, e.g., NF3, ClF3, F2, XeF2, CF4, or other fluorocarbon species of the formula CxFy, wherein x and y have stoichiometrically compatible values, and (ii) a nitrogen source, optionally wherein at least the halide cleaning agent in the cleaning composition has been subjected to plasma generation to form a plasma. The use of relatively inexpensive nitrogen sources enables the amount of costly halide to be reduced in applications such as cleaning of internal surfaces and components of microelectronic product manufacturing process tool chambers.

    Abstract translation: 用于从基底去除不需要的沉积材料的组合物，装置和方法，例如氮化物如氮化硅。 在一个实施方案中，这种去除是用组合物进行的，所述组合物包括（i）卤化物，例如NF 3，ClF 3，F 2 N， ，XeF 2，CF 4或其它式C x x F y的其它碳氟化合物，其中x和 y具有化学计量相容的值，和（ii）氮源，任选地，其中清洁组合物中的至少卤化物清洁剂已经经过等离子体生成以形成等离子体。 使用相对便宜的氮源使得在诸如清洁内表面和微电子产品制造工艺工具室的部件的应用中可以减少昂贵的卤化物的量。

    Gas sensor with attenuated drift characteristic
    4.
    发明授权
    Gas sensor with attenuated drift characteristic 有权
    具有衰减漂移特性的气体传感器

    公开(公告)号：US07370511B1

    公开(公告)日：2008-05-13

    申请号：US10795529

    申请日：2004-03-08

    Applicant: Ing-Shin Chen ,  Frank Dimeo, Jr. ,  Philip S. H. Chen ,  Jeffrey W. Neuner ,  James Welch ,  Bryan Hendrix

    Inventor： Ing-Shin Chen ,  Frank Dimeo, Jr. ,  Philip S. H. Chen ,  Jeffrey W. Neuner ,  James Welch ,  Bryan Hendrix

    IPC: G01N33/00

    CPC classification number: G01N33/005 ,  G01N27/128

    Abstract: A sensor with an attenuated drift characteristic, including a layer structure in which a sensing layer has a layer of diffusional barrier material on at least one of its faces. The sensor may for example be constituted as a hydrogen gas sensor including a palladium/yttrium layer structure formed on a micro-hotplate base, with a chromium barrier layer between the yttrium layer and the micro-hotplate, and with a tantalum barrier layer between the yttrium layer and an overlying palladium protective layer. The gas sensor is useful for detection of a target gas in environments susceptible to generation or incursion of such gas, and achieves substantial (e.g., >90%) reduction of signal drift from the gas sensor in extended operation, relative to a corresponding gas sensor lacking the diffusional barrier structure of the invention.

    Abstract translation: 具有衰减漂移特性的传感器，包括其中感测层在其至少一个面上具有扩散阻挡材料层的层结构。 传感器例如可以构成为包括形成在微电镀基板上的钯/钇层结构的氢气传感器，钇层和微电镀板之间的铬阻挡层，以及在 钇层和覆盖钯保护层。 气体传感器可用于在易于产生或侵入这种气体的环境中检测目标气体，并且相对于相应的气体传感器在延长的操作中实现了从气体传感器的信号漂移的实质（例如，> 90％）的减小 缺乏本发明的扩散屏障结构。

    Method and apparatus for monitoring plasma conditions in an etching plasma processing facility
    6.
    发明申请
    Method and apparatus for monitoring plasma conditions in an etching plasma processing facility 审中-公开
    用于监测蚀刻等离子体处理设备中的等离子体条件的方法和装置

    公开(公告)号：US20060211253A1

    公开(公告)日：2006-09-21

    申请号：US11081439

    申请日：2005-03-16

    Applicant: Ing-shin Chen ,  Jeffrey Neuner

    Inventor： Ing-shin Chen ,  Jeffrey Neuner

    IPC: H01L21/302 ,  G01L21/30 ,  C23F1/00

    CPC classification number: B81C1/00587 ,  B81C99/0065 ,  B81C2201/0138 ,  C23C16/4405 ,  G01N27/16 ,  H01J37/32935

    Abstract: The present invention relates to a method and system of using downstream sensor elements for determining the plasma conditions (e.g., plasma etching end point) in a semiconductor etching facility that utilizes halogen-containing plasma and/or oxygen-containing plasma. Such sensor elements are capable of exhibiting temperature change in the presence of energetic gas species, e.g., fluorine, chlorine, iodine, bromine, oxygen, and derivatives and radicals thereof that are generated by the plasma, and correspondingly generating an output signal indicative of such temperature change for determination of the plasma conditions in the etching plasma processing facility.

    Abstract translation: 本发明涉及使用下游传感器元件来确定半导体蚀刻设备中利用含卤素等离子体和/或含氧等离子体的等离子体条件（例如，等离子体蚀刻终点）的方法和系统。 这样的传感器元件能够在由等离子体产生的能量气体物质例如氟，氯，碘，溴，氧及其衍生物和自由基的存在下表现出温度变化，并且相应地产生指示其的输出信号 用于确定蚀刻等离子体处理设备中的等离子体条件的温度变化。

    Method And Apparatus For Monitoring Plasma Conditions In An Etching Plasma Processing Facility
    7.
    发明申请
    Method And Apparatus For Monitoring Plasma Conditions In An Etching Plasma Processing Facility 审中-公开
    用于在蚀刻等离子体处理设备中监测等离子体条件的方法和装置

    公开(公告)号：US20080134757A1

    公开(公告)日：2008-06-12

    申请号：US11908668

    申请日：2006-03-15

    Applicant: Ing-Shin Chen ,  Jeffrey W. Neuner ,  Frank Dimeo ,  Philip S.H. Chen ,  James J. Welch ,  Jeffrey F. Roeder

    Inventor： Ing-Shin Chen ,  Jeffrey W. Neuner ,  Frank Dimeo ,  Philip S.H. Chen ,  James J. Welch ,  Jeffrey F. Roeder

    IPC: G01N25/36

    CPC classification number: B81C1/00587 ,  B81C99/0065 ,  B81C2201/0138 ,  C23C16/4405 ,  G01N27/16 ,  H01J37/32935

    Abstract: A gas sensor and method of gas sensing, e.g., of a type as useful with downstream sensor elements for determining the plasma conditions (e.g., plasma etching end point) in a semiconductor etching facility that utilizes halogen-containing plasma and/or oxygen-containing plasma. Such sensor elements are capable of exhibiting temperature change in the presence of energetic gas species, e.g., fluorine, chlorine, iodine, bromine, oxygen, and derivatives and radicals thereof that are generated by the plasma, and correspondingly generating an output signal indicative of such temperature change for determination of the plasma conditions in the etching plasma processing facility.

    Abstract translation: 一种气体传感器和气体传感方法，例如，对于使用含卤素等离子体和/或含氧的半导体蚀刻设备中用于确定等离子体条件（例如，等离子体蚀刻终点）的下游传感器元件有用的类型 等离子体。 这样的传感器元件能够在由等离子体产生的能量气体物质例如氟，氯，碘，溴，氧及其衍生物和自由基的存在下表现出温度变化，并且相应地产生指示其的输出信号 用于确定蚀刻等离子体处理设备中的等离子体条件的温度变化。

    Apparatus and process for sensing target gas species in semiconductor processing systems
    9.
    发明授权
    Apparatus and process for sensing target gas species in semiconductor processing systems 有权
    用于在半导体处理系统中感测目标气体种类的装置和方法

    公开(公告)号：US07228724B2

    公开(公告)日：2007-06-12

    申请号：US10758825

    申请日：2004-01-16

    Applicant: Philip S. H. Chen ,  Ing-Shin Chen ,  Frank Dimeo, Jr. ,  Jeffrey W. Neuner ,  James Welch ,  Jeffrey F. Roeder

    Inventor： Philip S. H. Chen ,  Ing-Shin Chen ,  Frank Dimeo, Jr. ,  Jeffrey W. Neuner ,  James Welch ,  Jeffrey F. Roeder

    IPC: G01N19/10

    CPC classification number: G01N27/128 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32981

    Abstract: A gas detector for detecting a fluoro gas species in a gaseous environment containing same, e.g., an effluent from a semiconductor processing tool that employs corrosive fluoro species such as HF, NF3, etc. for etch cleaning. The gas detector preferably employs an elongated nickel-containing gas sensor element that can be vertically mounted on a fluoro-resistant support structure. Since the nickel-containing gas sensor element is sensitive to the fluoro species and is also electrically conductive, it can function both as a sensing component and a heat source when elevated temperature sensing is required. Vertical mounting of such elongated gas sensor element on the support structure significantly improves the signal strength, reduces the response time, minimizes the footprint of the gas detector, and provides structural flexibility for accommodating thermal expansion/contraction of the elongated gas sensor element.

    Abstract translation: 一种气体检测器，用于在含有其的气体环境中检测氟气体物质，例如来自使用腐蚀性氟物质如HF，NF 3等的用于蚀刻清洁的半导体加工工具的流出物。 气体检测器优选使用可以垂直安装在耐氟支撑结构上的细长的含镍气体传感器元件。 由于含镍气体传感器元件对氟物质敏感并且也是导电的，所以当需要高温感测时，它可以用作感测部件和热源。 这种细长气体传感器元件在支撑结构上的垂直安装显着地改善了信号强度，减少了响应时间，使气体检测器的占地面积最小化，并提供了用于适应细长气体传感器元件的热膨胀/收缩的结构灵活性。

    A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators
    10.
    发明授权
    A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators 失效
    A位和/或B位修饰的PbZrTiO3材料和在铁电随机存取存储器中有用的（Pb，Sr，Ca，Ba，Mg）（Zr，Ti，Nb，Ta）O 3膜和高性能薄膜微致动器

    公开(公告)号：US06312816B1

    公开(公告)日：2001-11-06

    申请号：US09026946

    申请日：1998-02-20

    Applicant: Jeffrey F. Roeder ,  Ing-Shin Chen ,  Steven Bilodeau ,  Thomas H. Baum

    Inventor： Jeffrey F. Roeder ,  Ing-Shin Chen ,  Steven Bilodeau ,  Thomas H. Baum

    IPC: H01G406

    CPC classification number: H01L41/187 ,  C30B25/02 ,  C30B29/32

    Abstract: A modified PbZrTiO3 perovskite crystal material thin film, wherein the PbZrTiO3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

    Abstract translation: 一种改性PbZrTiO3钙钛矿晶体材料薄膜，其中所述PbZrTiO3钙钛矿晶体材料包括晶格A位点和B位，其中至少一个通过存在选自以下的取代基进行修饰：（i）A-位点 由Sr，Ca，Ba和Mg组成的取代基，（ii）选自Nb和Ta的B位取代基。 钙钛矿晶体薄膜材料可以通过从薄膜的金属组分的金属有机前体的液体输送MOCVD形成，以形成PZT和PSZT等压电和铁电薄膜材料。 本发明的薄膜在非挥发性铁电存储器件（NV-FeRAM）中以及在微机电系统（MEMS）中用作传感器和/或致动器元件，例如需要低输入功率电平的高速数字系统致动器。

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