HIGH-FREQUENCY DEVICE
    1.
    发明申请

    公开(公告)号:US20220130777A1

    公开(公告)日:2022-04-28

    申请号:US17115755

    申请日:2020-12-08

    Inventor: Jen-Hai CHI

    Abstract: A high-frequency device includes a second substrate disposed opposite to a first substrate, a first electrode disposed on a side surface of the first substrate adjacent to the second substrate, a second electrode disposed on a side surface of the second substrate adjacent to the first substrate, a sealant disposed between the first substrate and the second substrate, and a dielectric layer sandwiched between the first substrate and the second substrate by the sealant. The dielectric layer includes a gas or vacuum.

    ELECTRONIC DEVICE
    3.
    发明申请

    公开(公告)号:US20240429207A1

    公开(公告)日:2024-12-26

    申请号:US18826227

    申请日:2024-09-06

    Abstract: An electronic device includes a carrier, a first electronic element, and a first connecting element. The carrier has a first bonding pad, a first conductive layer, a second conductive layer and an insulating layer with a via. The first conductive layer is disposed between the first bonding pad and the insulating layer, and electrically connected to the second conductive layer through the via. The first electronic element is disposed on the carrier and has a substrate. The first connecting element is disposed between the top surface of the first bonding pad and the first electronic element and electrically connected to the first bonding pad and the first electronic element. The substrate has a through hole which is overlapped with the first bonding pad and the first connecting element. A minimum distance between the through hole and the via is greater than zero.

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