公开(公告)号：US09741804B2

公开(公告)日：2017-08-22

申请号：US14935808

申请日：2015-11-09

Applicant: InnoLux Corporation

Inventor： Jung-Fang Chang ,  I-Ho Shen

IPC: H01L29/10 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L29/41733 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor (TFT) substrate includes a substrate and a TFT. The TFT is disposed on the substrate and comprises a gate, a gate dielectric layer, a film, a source and a drain. The gate is disposed on the substrate. The gate dielectric layer is disposed on the gate and the substrate. The film is disposed above the gate dielectric layer, and the source and the drain are disposed on the film and contacts with the film respectively. Wherein, there is an interval between the source and the drain, and the film corresponding to the interval has an arc concave portion. In addition, a display panel is also disclosed.

公开(公告)号：US09748397B2

公开(公告)日：2017-08-29

申请号：US14873236

申请日：2015-10-02

Applicant: InnoLux Corporation

Inventor： I-Ho Shen ,  Jung-Fang Chang

IPC: H01L29/786 ,  H01L51/05 ,  H01L27/28 ,  H01L51/00

CPC classification number: H01L29/78618 ,  H01L27/288 ,  H01L29/78621 ,  H01L29/78696 ,  H01L51/0053 ,  H01L51/0068 ,  H01L51/0558

Abstract: A thin-film transistor substrate is disclosed, which comprises a base layer; a semiconductor layer disposed on the base layer; a source electrode and a drain electrode disposed on the semiconductor layer; and a gate electrode disposed on the base layer and corresponding to the semiconductor layer; wherein the semiconductor layer includes a first region, a second region, and a third region, in which the first region corresponds to the gate electrode layer, the second region corresponds to the source electrode, and the third region corresponds to the drain electrode; and wherein the first region has a first thickness, the second region has a second thickness, and the third region has a third thickness, and the first thickness is greater than the second thickness or the third thickness.

公开(公告)号：US20250169110A1

公开(公告)日：2025-05-22

申请号：US18922253

申请日：2024-10-21

Applicant: Innolux Corporation

Inventor： Cheng-Hsu Chou ,  I-Ho Shen ,  Chih-Hsiung Chang

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/423

Abstract: An electronic device including a substrate and an electronic element is provided. The electronic element is disposed on the substrate and includes a first gate electrode, a semiconductor pattern, a source electrode, a drain electrode and a second gate electrode. The semiconductor pattern includes an overlapping region, a first side region and a second side region. A portion of the semiconductor pattern overlapped with the first gate electrode is defined as the overlapping region. The first side region and the second side region are respectively connected to two opposite sides of the overlapping region in a first direction and respectively include two opposite first edges of the semiconductor pattern. The source electrode and the drain electrode are respectively electrically connected to the first side region and the second side region. At least a portion of the second gate electrode is overlapped with the second side region of the semiconductor pattern.

公开(公告)号：US20230025999A1

公开(公告)日：2023-01-26

申请号：US17849701

申请日：2022-06-27

Applicant: Innolux Corporation

Inventor： Hao-Jung Huang ,  Chi-Liang Chang ,  I-Ho Shen ,  Ker-Yih Kao ,  Yun-Sheng Chen ,  Chiao-Chu Tsui ,  Chih-Han Ma ,  Shan-Shan Hsu ,  Chia-Chieh Fan

IPC: H01L23/31 ,  H01L23/60 ,  H01L27/15 ,  H01L25/075 ,  H01L51/52 ,  H01L25/04 ,  H01L27/32

Abstract: An electronic device including an electronic unit and a functional unit is provided. The electronic unit includes a substrate, a plurality of semiconductor components, and a cover layer. The substrate has a plurality of first side surfaces. The semiconductor components are disposed on the substrate. The cover layer is disposed on the semiconductor components and has a plurality of second side surfaces. The functional unit is disposed on at least one of at least one of the first side surfaces and at least one of the second side surfaces.