公开(公告)号：US20170084838A1

公开(公告)日：2017-03-23

申请号：US14857929

申请日：2015-09-18

Applicant: InnoLux Corporation

Inventor： Chi-Che TSAI ,  Po-Ching LIN ,  Po-Yun HSU ,  Szu-Yu LAI

IPC: H01L51/00 ,  H01L51/52 ,  H01L51/56

CPC classification number: H01L51/003 ,  H01L51/5246 ,  H01L51/56 ,  H01L2251/5338

Abstract: An electronic device and a method for manufacturing the same are disclosed. The electronic device of the present disclosure comprises: a target unit comprising an electronic unit layer; and small molecule residues adhered on a side of the target unit, wherein the small molecule residues are at least one selected from the group consisting of and R1, R1′, R2, R2′, R3, R3′, R4, R5, R6, R7, R8 are defined in the specification.

公开(公告)号：US20200045816A1

公开(公告)日：2020-02-06

申请号：US16504884

申请日：2019-07-08

Applicant: InnoLux Corporation

Inventor： Po-Yun HSU ,  Ker-Yih KAO ,  Chia-Ping TSENG

IPC: H05K1/03 ,  H05K3/00

Abstract: An electronic device and a method for manufacturing the same are disclosed. The method for manufacturing the electronic device includes the following steps: providing a substrate; forming a metal layer on the substrate, wherein the metal layer has a first surface; forming a first insulating layer on the first surface of the metal layer; forming a second insulating layer on the first insulating layer; etching the first insulating layer and the second insulating layer to form a contact hole, wherein the contact hole exposes a portion of the first surface; cleaning the portion of the first surface exposed by the contact hole with a solution; and forming a transparent conductive layer on the second insulating layer, wherein the transparent conductive layer electrically connects with the metal layer.

公开(公告)号：US20140362545A1

公开(公告)日：2014-12-11

申请号：US14279792

申请日：2014-05-16

Applicant: InnoLux Corporation

Inventor： Chi-Che TSAI ,  Yu-Yao CHEN ,  Po-Yun HSU ,  Wei-Yen WU

IPC: H05K1/18 ,  H05K1/03 ,  H05K3/28

CPC classification number: H05K3/007 ,  B32B7/06 ,  B32B38/10 ,  B32B2307/716 ,  B32B2310/08 ,  G02F1/1303 ,  G02F1/133305 ,  H01L51/003 ,  H01L2251/5338 ,  H05K1/0306 ,  H05K1/0393 ,  H05K2203/016 ,  Y10T428/31678

Abstract: An electronic apparatus and a method for manufacturing the same are disclosed. The electronic device of the present invention comprises: a substrate with a first surface and a second surface; an electronic unit layer disposed on the first surface of the substrate; a residue layer disposed on the second surface of the substrate, wherein a material of the residue layer comprises: a compound containing at least one functional group selected from the group consisting of aryl, nitro and ketone.

Abstract translation: 公开了一种电子设备及其制造方法。 本发明的电子器件包括：具有第一表面和第二表面的衬底; 设置在所述基板的第一表面上的电子单元层; 残留层，其设置在所述基板的第二表面上，其中所述残留层的材料包含：含有至少一个选自芳基，硝基和酮的官能团的化合物。

公开(公告)号：US20250105130A1

公开(公告)日：2025-03-27

申请号：US18808091

申请日：2024-08-19

Applicant: Innolux Corporation

Inventor： Ker-Yih KAO ,  Po-Yun HSU

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/00 ,  H01L23/15 ,  H01L25/18

Abstract: An electronic device includes a substrate having opposite first and second surfaces and a through hole having an inner wall connected to the first and second surfaces, a buffer layer covering the first and second surfaces and the inner wall, a conductor disposed in the through hole, a first circuit structure disposed on the first surface, an electronic element disposed on the first circuit structure, and first connectors disposed on the second surface and electrically connected to the electronic element through the conductor and the first circuit structure. The through hole has a width W and a depth D, and W/D is greater than or equal to 0.01 and less than or equal to 0.5. A thickness T of the buffer layer is greater than or equal to 0.01 μm and less than or equal to 10 μm. A manufacturing method of an electronic device is also provided.

公开(公告)号：US20210176861A1

公开(公告)日：2021-06-10

申请号：US17154599

申请日：2021-01-21

Applicant: InnoLux Corporation

Inventor： Po-Yun HSU ,  Ker-Yih KAO ,  Chia-Ping TSENG

IPC: H05K1/03 ,  H05K3/00 ,  H05K1/05

Abstract: An electronic device and a method for manufacturing the same are disclosed. The method for manufacturing the electronic device includes the following steps: providing a substrate; forming a metal layer on the substrate, wherein the metal layer has a first surface; forming a first insulating layer on the first surface of the metal layer; forming a second insulating layer on the first insulating layer; etching the first insulating layer and the second insulating layer to form a contact hole, wherein the contact hole exposes a portion of the first surface; cleaning the portion of the first surface exposed by the contact hole with a solution; and forming a transparent conductive layer on the second insulating layer, wherein the transparent conductive layer electrically connects with the metal layer.