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    Method and structure for controlling bandwidth and peaking over gain in a variable gain amplifier (VGA)
    2.
    发明授权
    Method and structure for controlling bandwidth and peaking over gain in a variable gain amplifier (VGA) 有权

    公开(公告)号：US10833643B1

    公开(公告)日：2020-11-10

    申请号：US16229301

    申请日：2018-12-21

    Applicant: INPHI CORPORATION

    Inventor： Tom Peter Edward Broekaert

    IPC: H03F3/45 ,  H03G1/00 ,  H03G3/30 ,  H03G1/02

    Abstract: A method of controlling bandwidth and peaking over gain in a variable gain amplifier (VGA) device and structure therefor. The device includes at least three differential transistor pairs configured as a cross-coupled differential amplifier with differential input nodes, differential bias nodes, differential output nodes, a current source node, and two cross-coupling nodes. The cross-coupled differential amplifier includes a load resistor coupled to each of the differential output nodes and one of the cross-coupling nodes, and a load inductor coupled to the each of the cross-coupling nodes and a power supply rail. A current source is electrically coupled to the current source node. The cross-coupling configuration with the load resistance and inductance results in a lower bandwidth and lowered peaking at low gain compared to high gain. Further, the tap point into the inductor can be chosen as another variable to “tune” the bandwidth and peaking in a communication system.

    Self biased dual mode differential CMOS TIA for 400G fiber optic links
    4.
    发明授权
    Self biased dual mode differential CMOS TIA for 400G fiber optic links 有权
    用于400G光纤链路的自偏置双模差分CMOS TIA

    公开(公告)号：US09264001B2

    公开(公告)日：2016-02-16

    申请号：US14340388

    申请日：2014-07-24

    Applicant: INPHI CORPORATION

    Inventor： Rahul Shringarpure ,  Tom Peter Edward Broekaert ,  Gaurav Mahajan

    IPC: H04B10/61 ,  H03F3/08 ,  H03F3/45

    CPC classification number: H03F3/082 ,  H03F1/0205 ,  H03F3/087 ,  H03F3/45179 ,  H03F3/45475 ,  H03F2200/555 ,  H04B10/616 ,  H04B10/693

    Abstract: A transimpedance amplifier (TIA) device. The device includes a photodiode coupled to a differential TIA with a first and second TIA, which is followed by a Level Shifting/Differential Amplifier (LS/DA). The photodiode is coupled between a first and a second input terminal of the first and second TIAs, respectively. The LS/DA can be coupled to a first and second output terminal of the first and second TIAs, respectively. The TIA device includes a semiconductor substrate comprising a plurality of CMOS cells, which can be configured using 28 nm process technology to the first and second TIAs. Each of the CMOS cells can include a deep n-type well region. The second TIA can be configured using a plurality CMOS cells such that the second input terminal is operable at any positive voltage level with respect to an applied voltage to a deep n-well for each of the plurality of second CMOS cells.

    Abstract translation: 跨阻放大器（TIA）器件。 该器件包括耦合到具有第一和第二TIA的差分TIA的光电二极管，其后面是电平移位/差分放大器（LS / DA）。 光电二极管分别耦合在第一和第二TIA的第一和第二输入端之间。 LS / DA可以分别耦合到第一和第二TIA的第一和第二输出端。 TIA器件包括包括多个CMOS电池的半导体衬底，其可以使用28nm工艺技术配置到第一和第二TIA。 每个CMOS单元可以包括深n型阱区。 可以使用多个CMOS单元来构造第二TIA，使得第二输入端子可以相对于多个第二CMOS单元中的每一个的深n阱的施加电压以任何正电压电平工作。

    Method and device for TIA overload control in low power applications
    5.
    发明授权
    Method and device for TIA overload control in low power applications 有权

    公开(公告)号：US10116263B1

    公开(公告)日：2018-10-30

    申请号：US15597077

    申请日：2017-05-16

    Applicant: INPHI CORPORATION

    Inventor： Tom Peter Edward Broekaert

    IPC: H03F3/08 ,  H03F1/52 ,  H03F1/02 ,  H03F3/45 ,  H04B10/61 ,  H04B10/69

    Abstract: A transimpedance amplifier (TIA) device and method of operation therefor. The TIA device can include a semiconductor substrate, a TIA with an input and output configured on the semiconductor substrate, and an overload buffer module coupled to the input terminal of the TIA. The overload buffer module can include a variable current source having an input and an output, and a biased buffer diode coupled to the output of the variable current source and to a ground node. The method of operation can include replicating, by the overload buffer module, the current-voltage (I/V) characteristics of the DC input signal at the output of the overload buffer module, wherein the overload buffer module reduces a total harmonic distortion (THD) of a DC output signal from the output of the TIA.

    Self biased dual mode differential CMOS TIA for 400G fiber optic links
    7.
    发明授权
    Self biased dual mode differential CMOS TIA for 400G fiber optic links 有权

    公开(公告)号：US10270403B2

    公开(公告)日：2019-04-23

    申请号：US15708930

    申请日：2017-09-19

    Applicant: INPHI CORPORATION

    Inventor： Rahul Shringarpure ,  Tom Peter Edward Broekaert ,  Gaurav Mahajan

    IPC: H04B10/61 ,  H03F3/08 ,  H03F3/45 ,  H03F1/02 ,  H04B10/69

    Abstract: A transimpedance amplifier (TIA) device. The device includes a photodiode coupled to a differential TIA with a first and second TIA, which is followed by a Level Shifting/Differential Amplifier (LS/DA). The photodiode is coupled between a first and a second input terminal of the first and second TIAs, respectively. The LS/DA can be coupled to a first and second output terminal of the first and second TIAs, respectively. The TIA device includes a semiconductor substrate comprising a plurality of CMOS cells, which can be configured using 28 nm process technology to the first and second TIAs. Each of the CMOS cells can include a deep n-type well region. The second TIA can be configured using a plurality CMOS cells such that the second input terminal is operable at any positive voltage level with respect to an applied voltage to a deep n-well for each of the plurality of second CMOS cells.

    SELF BIASED DUAL MODE DIFFERENTIAL CMOS TIA FOR 400G FIBER OPTIC LINKS
    10.
    发明申请
    SELF BIASED DUAL MODE DIFFERENTIAL CMOS TIA FOR 400G FIBER OPTIC LINKS 有权

    公开(公告)号：US20160118947A1

    公开(公告)日：2016-04-28

    申请号：US14987673

    申请日：2016-01-04

    Applicant: INPHI CORPORATION

    Inventor： Rahul Shringarpure ,  Tom Peter Edward Broekaert ,  Gaurav Mahajan

    IPC: H03F3/08 ,  H03F1/02

    CPC classification number: H03F3/082 ,  H03F1/0205 ,  H03F3/087 ,  H03F3/45179 ,  H03F3/45475 ,  H03F2200/555 ,  H04B10/616 ,  H04B10/693

    Abstract: A transimpedance amplifier (TIA) device. The device includes a photodiode coupled to a differential TIA with a first and second TIA, which is followed by a Level Shifting/Differential Amplifier (LS/DA). The photodiode is coupled between a first and a second input terminal of the first and second TIAs, respectively. The LS/DA can be coupled to a first and second output terminal of the first and second TIAs, respectively. The TIA device includes a semiconductor substrate comprising a plurality of CMOS cells, which can be configured using 28 nm process technology to the first and second TIAs. Each of the CMOS cells can include a deep n-type well region. The second TIA can be configured using a plurality CMOS cells such that the second input terminal is operable at any positive voltage level with respect to an applied voltage to a deep n-well for each of the plurality of second CMOS cells.

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