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公开(公告)号：US11480874B2
公开(公告)日：2022-10-25
申请号：US16654080
申请日：2019-10-16
Applicant: Inpria Corporation
Inventor： Michael Kocsis , Peter De Schepper , Michael Greer , Shu-Hao Chang
Abstract: A rinse process is described for processing an initially patterned structure formed with an organometallic radiation sensitive material, in which the rinse process can remove portions of the composition remaining after pattern development to make the patterned structure more uniform such that a greater fraction of patterned structures can meet specifications. The radiation sensitive material can comprise alkyl tin oxide hydroxide compositions. The rinsing process can be effectively used to improve patterning of fine structures using extreme ultraviolet light.
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Patent Agency Ranking
公开(公告)号：US11947262B2
公开(公告)日：2024-04-02
申请号：US17188679
申请日：2021-03-01
Applicant: Inpria Corporation
Inventor： Alan J. Telecky , Jason K. Stowers , Douglas A. Keszler , Stephen T. Meyers , Peter de Schepper , Sonia Castellanos Ortega , Michael Greer , Kirsten Louthan
CPC classification number: G03F7/38 , G03F7/0042
Abstract: The processing of radiation patternable organometallic coatings is shown to be improved through the appropriate selection of post processing conditions between coating and development of the pattern. In particular, a coated wafer can be subjected to process delays to allow aging of the coating at various process points, in particular following irradiation. Process delays can be combined and interspersed with heating steps. The atmosphere above the coated wafer at various process steps can be adjusted to obtain desired improvements in the development of the pattern. Reactive gases can be beneficial with respect to improvement of coating properties.
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公开(公告)号：US20250164887A1
公开(公告)日：2025-05-22
申请号：US19032836
申请日：2025-01-21
Applicant: Inpria Corporation
Inventor： Alan J. Telecky , Jason K. Stowers , Douglas A. Keszler , Stephen T. Meyers , Peter De Schepper , Sonia Castellanos Ortega , Michael Greer , Kirsten Louthan
Abstract: The processing of radiation patternable organometallic coatings is shown to be improved through the appropriate selection of post processing conditions between coating and development of the pattern. In particular, a coated wafer can be subjected to process delays to allow aging of the coating at various process points, in particular following irradiation. Process delays can be combined and interspersed with heating steps. The atmosphere above the coated wafer at various process steps can be adjusted to obtain desired improvements in the development of the pattern. Reactive gases can be beneficial with respect to improvement of coating properties.
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公开(公告)号：US20210271170A1
公开(公告)日：2021-09-02
申请号：US17188679
申请日：2021-03-01
Applicant: Inpria Corporation
Inventor： Alan J. Telecky , Jason K. Stowers , Douglas A. Keszler , Stephen T. Meyers , Peter de Schepper , Sonia Castellanos Ortega , Michael Greer , Kirsten Louthan
Abstract: The processing of radiation patternable organometallic coatings is shown to be improved through the appropriate selection of post processing conditions between coating and development of the pattern. In particular, a coated wafer can be subjected to process delays to allow aging of the coating at various process points, in particular following irradiation. Process delays can be combined and interspersed with heating steps. The atmosphere above the coated wafer at various process steps can be adjusted to obtain desired improvements in the development of the pattern. Reactive gases can be beneficial with respect to improvement of coating properties.
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公开(公告)号：US20240272557A1
公开(公告)日：2024-08-15
申请号：US18596255
申请日：2024-03-05
Applicant: Inpria Corporation
Inventor： Alan J. Telecky , Jason K. Stowers , Douglas A. Keszler , Stephen T. Meyers , Peter De Schepper , Sonia Castellanos Ortega , Michael Greer , Kirsten Louthan
CPC classification number: G03F7/38 , G03F7/0042
Abstract: The processing of radiation patternable organometallic coatings is shown to be improved through the appropriate selection of post processing conditions between coating and development of the pattern. In particular, a coated wafer can be subjected to process delays to allow aging of the coating at various process points, in particular following irradiation. Process delays can be combined and interspersed with heating steps. The atmosphere above the coated wafer at various process steps can be adjusted to obtain desired improvements in the development of the pattern. Reactive gases can be beneficial with respect to improvement of coating properties.
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公开(公告)号：US20230012169A1
公开(公告)日：2023-01-12
申请号：US17940244
申请日：2022-09-08
Applicant: Inpria Corporation
Inventor： Michael Kocsis , Peter De Schepper , Michael Greer , Shu-Hao Chang
Abstract: A rinse process is described for processing an initially patterned structure formed with an organometallic radiation sensitive material, in which the rinse process can remove portions of the composition remaining after pattern development to make the patterned structure more uniform such that a greater fraction of patterned structures can meet specifications. The radiation sensitive material can comprise alkyl tin oxide hydroxide compositions. The rinsing process can be effectively used to improve patterning of fine structures using extreme ultraviolet light.
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