公开(公告)号：US20240272557A1

公开(公告)日：2024-08-15

申请号：US18596255

申请日：2024-03-05

Applicant: Inpria Corporation

Inventor： Alan J. Telecky ,  Jason K. Stowers ,  Douglas A. Keszler ,  Stephen T. Meyers ,  Peter De Schepper ,  Sonia Castellanos Ortega ,  Michael Greer ,  Kirsten Louthan

IPC: G03F7/38 ,  G03F7/004

CPC classification number: G03F7/38 ,  G03F7/0042

Abstract: The processing of radiation patternable organometallic coatings is shown to be improved through the appropriate selection of post processing conditions between coating and development of the pattern. In particular, a coated wafer can be subjected to process delays to allow aging of the coating at various process points, in particular following irradiation. Process delays can be combined and interspersed with heating steps. The atmosphere above the coated wafer at various process steps can be adjusted to obtain desired improvements in the development of the pattern. Reactive gases can be beneficial with respect to improvement of coating properties.

公开(公告)号：US20240118614A1

公开(公告)日：2024-04-11

申请号：US18389961

申请日：2023-12-20

Applicant: Inpria Corporation

Inventor： Peter De Schepper ,  Jason K. Stowers ,  Sangyoon Woo ,  Michael Kocsis ,  Alan J. Telecky

IPC: G03F7/039 ,  G03F1/22 ,  G03F1/48 ,  G03F7/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/11 ,  G03F7/20 ,  G03F7/42

CPC classification number: G03F7/0392 ,  G03F1/22 ,  G03F1/48 ,  G03F7/0017 ,  G03F7/0042 ,  G03F7/0382 ,  G03F7/11 ,  G03F7/2004 ,  G03F7/2037 ,  G03F7/42

Abstract: Multiple patterning approaches using radiation sensitive organometallic materials is described. In particular, multiple patterning approaches can be used to provide distinct multiple patterns of organometallic material on a hardmask or other substrate through a sequential approach that leads to a final pattern. The multiple patterning approach may proceed via sequential lithography steps with multiple organometallic layers and may involve a hardbake freezing after development of each pattern. Use of an organometallic resist with dual tone properties to perform pattern cutting and multiple patterning of a single organometallic layer are described. Corresponding structures are also described.

公开(公告)号：US11347145B2

公开(公告)日：2022-05-31

申请号：US16837666

申请日：2020-04-01

Applicant: Inpria Corporation

Inventor： Jason K. Stowers ,  Andrew Grenville

IPC: G03F7/11 ,  G03F7/00 ,  H01L21/027 ,  G03F7/32 ,  H01L21/32 ,  H01L21/033 ,  H01L21/306 ,  G03F7/004

Abstract: High etch contrast materials provide the basis for using pre-patterned template structure with a template hardmask having periodic holes and filler within the holes that provides the basis for rapidly obtaining high resolution patterns guided by the template and high etch contrast resist. Methods are described for performing the radiation lithography, e.g., EUV radiation lithography, using the pre-patterned templates. Also, methods are described for forming the templates. The materials for forming the templates are described.

公开(公告)号：US10649328B2

公开(公告)日：2020-05-12

申请号：US15455784

申请日：2017-03-10

Applicant: Inpria Corporation

Inventor： Jason K. Stowers ,  Andrew Grenville

IPC: H01L21/768 ,  H01L21/32 ,  H01L21/306 ,  H01L21/033 ,  H01L21/027 ,  G03F7/32 ,  G03F7/11 ,  G03F7/004 ,  G03F7/00

Abstract: High etch contrast materials provide the basis for using pre-patterned template structure with a template hardmask having periodic holes and filler within the holes that provides the basis for rapidly obtaining high resolution patterns guided by the template and high etch contrast resist. Methods are described for performing the radiation lithography, e.g., EUV radiation lithography, using the pre-patterned templates. Also, methods are described for forming the templates. The materials for forming the templates are described.

公开(公告)号：US09823564B2

公开(公告)日：2017-11-21

申请号：US14858612

申请日：2015-09-18

Applicant: Inpria Corporation

Inventor： Jason K. Stowers ,  Alan J. Telecky ,  Douglas A. Keszler ,  Andrew Grenville

IPC: G03F7/20 ,  G03F7/004 ,  G03F7/32

CPC classification number: G03F7/0043 ,  G03F7/0042 ,  G03F7/20 ,  G03F7/327 ,  Y10T428/24355

Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.

公开(公告)号：US11886116B2

公开(公告)日：2024-01-30

申请号：US17307223

申请日：2021-05-04

Applicant: Inpria Corporation

Inventor： Peter de Schepper ,  Jason K. Stowers ,  Sangyoon Woo ,  Michael Kocsis ,  Alan J. Telecky

IPC: G03F7/039 ,  G03F7/20 ,  G03F7/11 ,  G03F7/00 ,  G03F7/038 ,  G03F7/42 ,  G03F7/004 ,  G03F1/48 ,  G03F1/22

CPC classification number: G03F7/0392 ,  G03F1/22 ,  G03F1/48 ,  G03F7/0017 ,  G03F7/0042 ,  G03F7/0382 ,  G03F7/11 ,  G03F7/2004 ,  G03F7/2037 ,  G03F7/42

Abstract: Multiple patterning approaches using radiation sensitive organometallic materials is described. In particular, multiple patterning approaches can be used to provide distinct multiple patterns of organometallic material on a hardmask or other substrate through a sequential approach that leads to a final pattern. The multiple patterning approach may proceed via sequential lithography steps with multiple organometallic layers and may involve a hardbake freezing after development of each pattern. Use of an organometallic resist with dual tone properties to perform pattern cutting and multiple patterning of a single organometallic layer are described. Corresponding structures are also described.

公开(公告)号：US11693312B2

公开(公告)日：2023-07-04

申请号：US17895657

申请日：2022-08-25

Applicant: Inpria Corporation

Inventor： Jason K. Stowers ,  Alan J. Telecky ,  Douglas A. Keszler ,  Andrew Grenville

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/0043 ,  G03F7/0042 ,  G03F7/20 ,  G03F7/327 ,  Y10T428/24355

Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.

公开(公告)号：US20210271170A1

公开(公告)日：2021-09-02

申请号：US17188679

申请日：2021-03-01

Applicant: Inpria Corporation

Inventor： Alan J. Telecky ,  Jason K. Stowers ,  Douglas A. Keszler ,  Stephen T. Meyers ,  Peter de Schepper ,  Sonia Castellanos Ortega ,  Michael Greer ,  Kirsten Louthan

IPC: G03F7/38 ,  G03F7/004

Abstract: The processing of radiation patternable organometallic coatings is shown to be improved through the appropriate selection of post processing conditions between coating and development of the pattern. In particular, a coated wafer can be subjected to process delays to allow aging of the coating at various process points, in particular following irradiation. Process delays can be combined and interspersed with heating steps. The atmosphere above the coated wafer at various process steps can be adjusted to obtain desired improvements in the development of the pattern. Reactive gases can be beneficial with respect to improvement of coating properties.

公开(公告)号：US10782610B2

公开(公告)日：2020-09-22

申请号：US15784258

申请日：2017-10-16

Applicant: Inpria Corporation

Inventor： Jason K. Stowers ,  Alan J. Telecky ,  Douglas A. Keszler ,  Andrew Grenville

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/32

Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.

公开(公告)号：US20200292937A1

公开(公告)日：2020-09-17

申请号：US16885581

申请日：2020-05-28

Applicant: Inpria Corporation

Inventor： Jason K. Stowers ,  Alan J. Telecky ,  Douglas A. Keszler ,  Andrew Grenville

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/32

Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.