公开(公告)号：US20240369923A1

公开(公告)日：2024-11-07

申请号：US18778388

申请日：2024-07-19

Applicant: Inpria Corporation

Inventor： Benjamin L. Clark ,  Gaetano Giordano ,  Shu-Hao Chang ,  Dominick Smiddy ,  Mark Geniza ,  Craig M. Gates ,  Jan Doise ,  Peter De Schepper

IPC: G03F7/004 ,  G03F7/16

Abstract: In the context of forming radiation patternable structures especially for EUV patterning, wafer structures are described comprising a substrate having a smooth top surface and a radiation sensitive organometallic coating having an average thickness of no more than 100 nm and no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Corresponding methods for forming a low defect coating comprise spin coating a purified radiation sensitive organometallic resist solution onto a wafer using a spin coater system comprising a delivery line and a delivery nozzle connected to the delivery line to form a coated wafer, and drying the coated wafer to form a radiation sensitive organometallic coating having no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Methods are provided for improved filtering for particle removal from radiation patternable organometallic resist compositions.

公开(公告)号：US20230012169A1

公开(公告)日：2023-01-12

申请号：US17940244

申请日：2022-09-08

Applicant: Inpria Corporation

Inventor： Michael Kocsis ,  Peter De Schepper ,  Michael Greer ,  Shu-Hao Chang

IPC: G03F7/004 ,  G03F7/32 ,  G03F7/42 ,  G03F7/40

Abstract: A rinse process is described for processing an initially patterned structure formed with an organometallic radiation sensitive material, in which the rinse process can remove portions of the composition remaining after pattern development to make the patterned structure more uniform such that a greater fraction of patterned structures can meet specifications. The radiation sensitive material can comprise alkyl tin oxide hydroxide compositions. The rinsing process can be effectively used to improve patterning of fine structures using extreme ultraviolet light.

公开(公告)号：US11480874B2

公开(公告)日：2022-10-25

申请号：US16654080

申请日：2019-10-16

Applicant: Inpria Corporation

Inventor： Michael Kocsis ,  Peter De Schepper ,  Michael Greer ,  Shu-Hao Chang

IPC: G03F7/004 ,  G03F7/32 ,  G03F7/42 ,  G03F7/40

Abstract: A rinse process is described for processing an initially patterned structure formed with an organometallic radiation sensitive material, in which the rinse process can remove portions of the composition remaining after pattern development to make the patterned structure more uniform such that a greater fraction of patterned structures can meet specifications. The radiation sensitive material can comprise alkyl tin oxide hydroxide compositions. The rinsing process can be effectively used to improve patterning of fine structures using extreme ultraviolet light.

公开(公告)号：US20210011383A1

公开(公告)日：2021-01-14

申请号：US16926125

申请日：2020-07-10

Applicant: Inpria Corporation

Inventor： Brian J. Cardineau ,  Shu-Hao Chang ,  Jason K. Stowers ,  Michael Kocsis ,  Peter de Schepper

IPC: G03F7/11 ,  G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

Abstract: A method is described for stabilizing organometallic coating interfaces through the use of multilayer structures that incorporate an underlayer coating. The underlayer is composed of an organic polymer that has crosslinking and adhesion-promoting functional groups. The underlayer composition may include photoacid generators. Multilayer structures for patterning are described based on organometallic radiation sensitive patterning compositions, such as alkyl tin oxo hydroxo compositions, which are placed over a polymer underlayer.