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公开(公告)号：US11480874B2
公开(公告)日：2022-10-25
申请号：US16654080
申请日：2019-10-16
Applicant: Inpria Corporation
Inventor： Michael Kocsis , Peter De Schepper , Michael Greer , Shu-Hao Chang
Abstract: A rinse process is described for processing an initially patterned structure formed with an organometallic radiation sensitive material, in which the rinse process can remove portions of the composition remaining after pattern development to make the patterned structure more uniform such that a greater fraction of patterned structures can meet specifications. The radiation sensitive material can comprise alkyl tin oxide hydroxide compositions. The rinsing process can be effectively used to improve patterning of fine structures using extreme ultraviolet light.
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Patent Agency Ranking
公开(公告)号：US20250164887A1
公开(公告)日：2025-05-22
申请号：US19032836
申请日：2025-01-21
Applicant: Inpria Corporation
Inventor： Alan J. Telecky , Jason K. Stowers , Douglas A. Keszler , Stephen T. Meyers , Peter De Schepper , Sonia Castellanos Ortega , Michael Greer , Kirsten Louthan
Abstract: The processing of radiation patternable organometallic coatings is shown to be improved through the appropriate selection of post processing conditions between coating and development of the pattern. In particular, a coated wafer can be subjected to process delays to allow aging of the coating at various process points, in particular following irradiation. Process delays can be combined and interspersed with heating steps. The atmosphere above the coated wafer at various process steps can be adjusted to obtain desired improvements in the development of the pattern. Reactive gases can be beneficial with respect to improvement of coating properties.
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3.发明申请公开(公告)号：US20240369923A1
公开(公告)日：2024-11-07
申请号：US18778388
申请日：2024-07-19
Applicant: Inpria Corporation
Inventor： Benjamin L. Clark , Gaetano Giordano , Shu-Hao Chang , Dominick Smiddy , Mark Geniza , Craig M. Gates , Jan Doise , Peter De Schepper
Abstract: In the context of forming radiation patternable structures especially for EUV patterning, wafer structures are described comprising a substrate having a smooth top surface and a radiation sensitive organometallic coating having an average thickness of no more than 100 nm and no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Corresponding methods for forming a low defect coating comprise spin coating a purified radiation sensitive organometallic resist solution onto a wafer using a spin coater system comprising a delivery line and a delivery nozzle connected to the delivery line to form a coated wafer, and drying the coated wafer to form a radiation sensitive organometallic coating having no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Methods are provided for improved filtering for particle removal from radiation patternable organometallic resist compositions.
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公开(公告)号：US20240272557A1
公开(公告)日：2024-08-15
申请号：US18596255
申请日：2024-03-05
Applicant: Inpria Corporation
Inventor： Alan J. Telecky , Jason K. Stowers , Douglas A. Keszler , Stephen T. Meyers , Peter De Schepper , Sonia Castellanos Ortega , Michael Greer , Kirsten Louthan
CPC classification number: G03F7/38 , G03F7/0042
Abstract: The processing of radiation patternable organometallic coatings is shown to be improved through the appropriate selection of post processing conditions between coating and development of the pattern. In particular, a coated wafer can be subjected to process delays to allow aging of the coating at various process points, in particular following irradiation. Process delays can be combined and interspersed with heating steps. The atmosphere above the coated wafer at various process steps can be adjusted to obtain desired improvements in the development of the pattern. Reactive gases can be beneficial with respect to improvement of coating properties.
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5.发明公开公开(公告)号：US20240118614A1
公开(公告)日：2024-04-11
申请号：US18389961
申请日：2023-12-20
Applicant: Inpria Corporation
Inventor： Peter De Schepper , Jason K. Stowers , Sangyoon Woo , Michael Kocsis , Alan J. Telecky
IPC: G03F7/039 , G03F1/22 , G03F1/48 , G03F7/00 , G03F7/004 , G03F7/038 , G03F7/11 , G03F7/20 , G03F7/42
CPC classification number: G03F7/0392 , G03F1/22 , G03F1/48 , G03F7/0017 , G03F7/0042 , G03F7/0382 , G03F7/11 , G03F7/2004 , G03F7/2037 , G03F7/42
Abstract: Multiple patterning approaches using radiation sensitive organometallic materials is described. In particular, multiple patterning approaches can be used to provide distinct multiple patterns of organometallic material on a hardmask or other substrate through a sequential approach that leads to a final pattern. The multiple patterning approach may proceed via sequential lithography steps with multiple organometallic layers and may involve a hardbake freezing after development of each pattern. Use of an organometallic resist with dual tone properties to perform pattern cutting and multiple patterning of a single organometallic layer are described. Corresponding structures are also described.
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公开(公告)号：US20230012169A1
公开(公告)日：2023-01-12
申请号：US17940244
申请日：2022-09-08
Applicant: Inpria Corporation
Inventor： Michael Kocsis , Peter De Schepper , Michael Greer , Shu-Hao Chang
Abstract: A rinse process is described for processing an initially patterned structure formed with an organometallic radiation sensitive material, in which the rinse process can remove portions of the composition remaining after pattern development to make the patterned structure more uniform such that a greater fraction of patterned structures can meet specifications. The radiation sensitive material can comprise alkyl tin oxide hydroxide compositions. The rinsing process can be effectively used to improve patterning of fine structures using extreme ultraviolet light.
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