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公开(公告)号：US20210011383A1
公开(公告)日：2021-01-14
申请号：US16926125
申请日：2020-07-10
Applicant: Inpria Corporation
Inventor： Brian J. Cardineau , Shu-Hao Chang , Jason K. Stowers , Michael Kocsis , Peter de Schepper
Abstract: A method is described for stabilizing organometallic coating interfaces through the use of multilayer structures that incorporate an underlayer coating. The underlayer is composed of an organic polymer that has crosslinking and adhesion-promoting functional groups. The underlayer composition may include photoacid generators. Multilayer structures for patterning are described based on organometallic radiation sensitive patterning compositions, such as alkyl tin oxo hydroxo compositions, which are placed over a polymer underlayer.
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2.发明申请公开(公告)号：US20210349390A1
公开(公告)日：2021-11-11
申请号：US17307223
申请日：2021-05-04
Applicant: Inpria Corporation
Inventor： Peter de Schepper , Jason K. Stowers , Sangyoon Woo , Michael Kocsis , Alan J. Telecky
IPC: G03F7/039 , G03F7/20 , G03F7/11 , G03F7/038 , G03F7/004 , G03F1/48 , G03F7/00 , G03F1/22 , G03F7/42
Abstract: Multiple patterning approaches using radiation sensitive organometallic materials is described. In particular, multiple patterning approaches can be used to provide distinct multiple patterns of organometallic material on a hardmask or other substrate through a sequential approach that leads to a final pattern. The multiple patterning approach may proceed via sequential lithography steps with multiple organometallic layers and may involve a hardbake freezing after development of each pattern. Use of an organometallic resist with dual tone properties to perform pattern cutting and multiple patterning of a single organometallic layer are described. Corresponding structures are also described.
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公开(公告)号：US20240319599A1
公开(公告)日：2024-09-26
申请号：US18125934
申请日：2023-03-24
Applicant: Inpria Corporation , JSR Corporation
Inventor： Kazunori Sakai , Tatsuya Kasai , Akitaka Nii , Peter de Schepper
IPC: G03F7/11 , C09D7/63 , C09D183/16
CPC classification number: G03F7/11 , C09D7/63 , C09D183/16
Abstract: Gas releasing compositions that can facilitate improved patterning of organometallic resists are described. The gas releasing compositions can release water, carbon dioxide, or alcohols in response to radiation or heating. A film-forming composition is composed of a flowable blend of a reactive gas releasing moiety, a matrix forming species, an organic solvent, and an optional activating agent. An underlayer composition is composed of a blend of a reactive gas releasing moiety, a polymer matrix and an optional activating additive. Multilayer structures are described based on organometallic radiation sensitive patterning compositions, such as alkyl tin oxo-hydroxo compositions, which are placed over a gas releasing underlayer formed on a substrate, such as a semiconductor wafer. Methods for patterning multilayer structures are also described.
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4.发明授权公开(公告)号：US12072626B2
公开(公告)日：2024-08-27
申请号：US17180500
申请日：2021-02-19
Applicant: Inpria Corporation
Inventor： Benjamin L. Clark , Gaetano Giordano , Shu-Hao L. Chang , Dominick Smiddy , Mark Geniza , Craig M. Gates , Jan Doise , Peter de Schepper
CPC classification number: G03F7/0042 , G03F7/162 , G03F7/168
Abstract: In the context of forming radiation patternable structures especially for EUV patterning, wafer structures are described comprising a substrate having a smooth top surface and a radiation sensitive organometallic coating having an average thickness of no more than 100 nm and no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Corresponding methods for forming a low defect coating comprise spin coating a purified radiation sensitive organometallic resist solution onto a wafer using a spin coater system comprising a delivery line and a delivery nozzle connected to the delivery line to form a coated wafer, and drying the coated wafer to form a radiation sensitive organometallic coating having no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Methods are provided for improved filtering for particle removal from radiation patternable organometallic resist compositions.
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Patent Agency Ranking
5.发明授权公开(公告)号：US11886116B2
公开(公告)日：2024-01-30
申请号：US17307223
申请日：2021-05-04
Applicant: Inpria Corporation
Inventor： Peter de Schepper , Jason K. Stowers , Sangyoon Woo , Michael Kocsis , Alan J. Telecky
IPC: G03F7/039 , G03F7/20 , G03F7/11 , G03F7/00 , G03F7/038 , G03F7/42 , G03F7/004 , G03F1/48 , G03F1/22
CPC classification number: G03F7/0392 , G03F1/22 , G03F1/48 , G03F7/0017 , G03F7/0042 , G03F7/0382 , G03F7/11 , G03F7/2004 , G03F7/2037 , G03F7/42
Abstract: Multiple patterning approaches using radiation sensitive organometallic materials is described. In particular, multiple patterning approaches can be used to provide distinct multiple patterns of organometallic material on a hardmask or other substrate through a sequential approach that leads to a final pattern. The multiple patterning approach may proceed via sequential lithography steps with multiple organometallic layers and may involve a hardbake freezing after development of each pattern. Use of an organometallic resist with dual tone properties to perform pattern cutting and multiple patterning of a single organometallic layer are described. Corresponding structures are also described.
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公开(公告)号：US20210271170A1
公开(公告)日：2021-09-02
申请号：US17188679
申请日：2021-03-01
Applicant: Inpria Corporation
Inventor： Alan J. Telecky , Jason K. Stowers , Douglas A. Keszler , Stephen T. Meyers , Peter de Schepper , Sonia Castellanos Ortega , Michael Greer , Kirsten Louthan
Abstract: The processing of radiation patternable organometallic coatings is shown to be improved through the appropriate selection of post processing conditions between coating and development of the pattern. In particular, a coated wafer can be subjected to process delays to allow aging of the coating at various process points, in particular following irradiation. Process delays can be combined and interspersed with heating steps. The atmosphere above the coated wafer at various process steps can be adjusted to obtain desired improvements in the development of the pattern. Reactive gases can be beneficial with respect to improvement of coating properties.
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公开(公告)号：US11947262B2
公开(公告)日：2024-04-02
申请号：US17188679
申请日：2021-03-01
Applicant: Inpria Corporation
Inventor： Alan J. Telecky , Jason K. Stowers , Douglas A. Keszler , Stephen T. Meyers , Peter de Schepper , Sonia Castellanos Ortega , Michael Greer , Kirsten Louthan
CPC classification number: G03F7/38 , G03F7/0042
Abstract: The processing of radiation patternable organometallic coatings is shown to be improved through the appropriate selection of post processing conditions between coating and development of the pattern. In particular, a coated wafer can be subjected to process delays to allow aging of the coating at various process points, in particular following irradiation. Process delays can be combined and interspersed with heating steps. The atmosphere above the coated wafer at various process steps can be adjusted to obtain desired improvements in the development of the pattern. Reactive gases can be beneficial with respect to improvement of coating properties.
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公开(公告)号：US20230100995A1
公开(公告)日：2023-03-30
申请号：US17950685
申请日：2022-09-22
Applicant: Inpria Corporation , Tokyo Electron Limited
Inventor： Brian J. Cardineau , Peter de Schepper
Abstract: Patterning of organometallic radiation sensitive compositions is facilitated using a gaseous form of a contrast enhancing agent, which can include a carboxylic acid, an amide, a sulfonic acid, an alcohol, a diol, a silyl halide, a germanium halide, a tin halide, an amine, a thiol, or a mixture thereof, in which the mixture can be of the same class or different class of compounds. Contact with the contrast enhancing reactive compound is provided after irradiation of the organometallic composition to form a latent image. The contrast enhancing agent can be delivered before or after physical pattern development, and processing with the contrast enhancing agent can involve removal in a thermal process of some or substantially all of the non-irradiated organometallic composition. The contrast enhancing agent can be used in a dry thermal development step. If the contrast enhancing agent is used after a distinct development step, use of the contrast enhancing agent can involve improvement of the pattern quality. Apparatuses for performing processing with contrast enhancing agents are described.
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9.发明申请公开(公告)号：US20220269169A1
公开(公告)日：2022-08-25
申请号：US17180500
申请日：2021-02-19
Applicant: Inpria Corporation
Inventor： Benjamin L. Clark , Gaetano Giordano , Shu-Hao L. Chang , Dominick Smiddy , Mark Geniza , Craig M. Gates , Jan Doise , Peter de Schepper
Abstract: In the context of forming radiation patternable structures especially for EUV patterning, wafer structures are described comprising a substrate having a smooth top surface and a radiation sensitive organometallic coating having an average thickness of no more than 100 nm and no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Corresponding methods for forming a low defect coating comprise spin coating a purified radiation sensitive organometallic resist solution onto a wafer using a spin coater system comprising a delivery line and a delivery nozzle connected to the delivery line to form a coated wafer, and drying the coated wafer to form a radiation sensitive organometallic coating having no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Methods are provided for improved filtering for particle removal from radiation patternable organometallic resist compositions.
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