公开(公告)号：US09090451B1

公开(公告)日：2015-07-28

申请号：US13837854

申请日：2013-03-15

Applicant: Integrated Device Technology, Inc.

Inventor： Wanling Pan ,  Harmeet Bhugra ,  Maryam Ziaei-Moayyed

IPC: H03B5/32 ,  H01L41/08 ,  B81B3/00 ,  H01L41/083

CPC classification number: B81B3/0021 ,  H01L41/083 ,  H03B21/01 ,  H03H9/02228 ,  H03H9/02448 ,  H03H2009/241

Abstract: A TPoS resonator includes a substrate and a resonator body suspended over the substrate by at least a first pair of fixed supports (e.g., tethers) that attach to first and second ends of the resonator body. The resonator body includes monocrystalline silicon, which has a [100] crystallographic orientation that is offset by ±α degrees relative to a nodal line of the resonator body (e.g., tether-to-tether axis) when the resonator body is operating at a resonant frequency, where a is a real number in a range from about 5 to about 19 and, more preferably, in a range from about 7 to about 17. The resonator may be an extensional-mode resonator and the resonator body may be rectangular-shaped with unequal length and width dimensions.

Abstract translation: TPoS谐振器包括衬底和谐振器体，所述谐振器体通过附接到谐振器本体的第一和第二端的至少第一对固定支撑件（例如系绳）悬挂在衬底上。 谐振器主体包括单晶硅，当谐振器主体以谐振器工作时，其具有相对于谐振器主体的节点线（例如，系绳至系绳轴线）偏移±α度的[100]晶体取向 频率，其中a是在约5至约19的范围内的实数，更优选在约7至约17的范围内。谐振器可以是延伸模式谐振器，并且谐振器体可以是矩形 具有不等长度和宽度尺寸。

公开(公告)号：US08785229B1

公开(公告)日：2014-07-22

申请号：US13898999

申请日：2013-05-21

Applicant: Integrated Device Technology, Inc.

Inventor： Wanling Pan

IPC: H01L21/00 ,  H01L41/00

CPC classification number: H03H3/02 ,  H03H9/02228 ,  H03H9/172 ,  H03H9/564 ,  H03H2003/0407 ,  H03H2003/0478

Abstract: Methods of forming micromechanical resonators include forming first and second substrates having first and second semiconductor layers of first and second conductivity type therein, respectively. The first semiconductor layer of first conductivity type is bonded to the second semiconductor layer of second conductivity type to thereby define a first rectifying junction at an interface of the bonded semiconductor layers. A piezoelectric layer is formed on the first rectifying junction and at least a first electrode is formed on the piezoelectric layer.

Abstract translation: 形成微机械谐振器的方法包括分别形成其中分别具有第一和第二导电类型的第一和第二半导体层的第一和第二基板。 第一导电类型的第一半导体层被结合到第二导电类型的第二半导体层，从而在键合的半导体层的界面处限定第一整流结。 压电层形成在第一整流结上，并且至少第一电极形成在压电层上。