DEVICE UNDER TEST (DUT) STRUCTURES FOR VOLTAGE CONTRAST (VC) DETECTION OF CONTACT OPENS

    公开(公告)号:US20240329122A1

    公开(公告)日:2024-10-03

    申请号:US18128617

    申请日:2023-03-30

    CPC classification number: G01R31/2884

    Abstract: A device under test (DUT) structure for voltage contrast (VC) detection of contact opens comprises a fin formed along a first direction over a substrate, the fin having a diffusion region, the fin doped to form i) a p-type fin and a p-type diffusion region or ii) an n-type fin and an n-type diffusion region. A trench contact (TCN) segment is along a second direction generally orthogonal to the first direction over the fin and in contact with the diffusion region. A floating gate is generally parallel to the TCN segment over the fin, wherein the floating gate and the TCN segment are not in contact, and the floating gate does not have a via formed thereon.

    DESIGN OF VOLTAGE CONTRAST PROCESS MONITOR
    2.
    发明公开

    公开(公告)号:US20240112962A1

    公开(公告)日:2024-04-04

    申请号:US17958281

    申请日:2022-09-30

    CPC classification number: H01L22/32 G01R31/52 G01R31/54

    Abstract: Embodiments disclosed herein include an apparatus for alignment detection. In an embodiment, the apparatus comprises a substrate, and a plurality of devices on the substrate, where each of the plurality of devices comprises a process monitor structure with different offsets from a target value. In an embodiment, a plurality of electrically conductive traces are on the substrate, where each of the plurality of electrically conductive traces has a first end and a second end opposite the first end, and where each of the plurality of electrically conductive traces is electrically coupled at the first end, respectively, with each of the plurality of devices. In an embodiment, the second end of the each of the plurality of electrical traces is within a scan area on the substrate, and where the each of the plurality of electrically conductive traces are not directly electrically coupled with each other.

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