公开(公告)号：US20170309734A1

公开(公告)日：2017-10-26

申请号：US15626067

申请日：2017-06-16

Applicant: Intel Corporation

Inventor： Suman DATTA ,  Mantu K. HUDAIT ,  Mark L. DOCZY ,  Jack T. KAVALIEROS ,  Amlan MAJUMDAR ,  Justin K. BRASK ,  Been-Yih JIN ,  Matthew V. METZ ,  Robert S. CHAU

IPC: H01L29/778 ,  H01L29/205 ,  H01L27/092 ,  H01L29/15 ,  H01L29/66 ,  H01L29/51

CPC classification number: H01L29/7784 ,  H01L21/02178 ,  H01L21/02381 ,  H01L21/02546 ,  H01L21/823807 ,  H01L21/823885 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/092 ,  H01L29/1054 ,  H01L29/122 ,  H01L29/15 ,  H01L29/157 ,  H01L29/205 ,  H01L29/41783 ,  H01L29/42364 ,  H01L29/42376 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/7783

Abstract: A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate.