公开(公告)号：US20170309734A1

公开(公告)日：2017-10-26

申请号：US15626067

申请日：2017-06-16

Applicant: Intel Corporation

Inventor： Suman DATTA ,  Mantu K. HUDAIT ,  Mark L. DOCZY ,  Jack T. KAVALIEROS ,  Amlan MAJUMDAR ,  Justin K. BRASK ,  Been-Yih JIN ,  Matthew V. METZ ,  Robert S. CHAU

IPC: H01L29/778 ,  H01L29/205 ,  H01L27/092 ,  H01L29/15 ,  H01L29/66 ,  H01L29/51

CPC classification number: H01L29/7784 ,  H01L21/02178 ,  H01L21/02381 ,  H01L21/02546 ,  H01L21/823807 ,  H01L21/823885 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/092 ,  H01L29/1054 ,  H01L29/122 ,  H01L29/15 ,  H01L29/157 ,  H01L29/205 ,  H01L29/41783 ,  H01L29/42364 ,  H01L29/42376 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/7783

Abstract: A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate.

公开(公告)号：US20170317172A1

公开(公告)日：2017-11-02

申请号：US15650569

申请日：2017-07-14

Applicant: Intel Corporation

Inventor： Jack T. KAVALIEROS ,  Nancy ZELICK ,  Been-Yih JIN ,  Markus KUHN ,  Stephen M. CEA

IPC: H01L29/10 ,  H01L29/78 ,  H01L29/161 ,  H01L29/66 ,  H01L29/165

CPC classification number: H01L29/1054 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/7842 ,  H01L29/7849 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7854

Abstract: Techniques are disclosed for enabling multi-sided condensation of semiconductor fins. The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.