公开(公告)号：US11515297B2

公开(公告)日：2022-11-29

申请号：US16455678

申请日：2019-06-27

Applicant: Intel Corporation

Inventor： Khaled Ahmed ,  Andrew William Keates

IPC: H01L25/16 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/42 ,  H01L33/50 ,  H01L25/075 ,  H01L25/04 ,  H01L27/12 ,  H01L29/786 ,  H01L33/06

Abstract: Micro light-emitting diode displays having colloidal or graded index quantum dot films and methods of fabricating micro light-emitting diode displays having colloidal or graded index quantum dot films are described. In an example, a micro light emitting diode pixel structure includes a plurality of micro light emitting diode devices in a dielectric layer. A transparent conducting oxide layer is above the dielectric layer. A material layer is on the transparent conducting oxide layer, the material layer having a portion with a hydrophilic surface and a portion with a hydrophobic surface, the hydrophilic surface over one of the plurality of micro light emitting diode devices. A color conversion film is on the hydrophilic surface of the material layer and over the one of the plurality of micro light emitting diode devices.