公开(公告)号：US20230395166A1

公开(公告)日：2023-12-07

申请号：US18235727

申请日：2023-08-18

Applicant: Intel Corporation

Inventor： Arun Sitaram ATHREYA ,  Shankar NATARAJAN ,  Sriram NATARAJAN ,  Yihua ZHANG ,  Suresh NAGARAJAN

IPC: G11C16/34 ,  G06F3/06 ,  G11C16/26 ,  G11C11/56 ,  G11C16/04 ,  G11C16/08

CPC classification number: G11C16/3427 ,  G06F3/0604 ,  G06F3/0659 ,  G06F3/0688 ,  G11C16/26 ,  G11C11/5671 ,  G11C16/0483 ,  G11C16/08 ,  G11C11/5642

Abstract: Techniques for preventing read disturb in NAND memory devices are described. In one example, reads are tracked for sub-groups. When the number of reads to a sub-group meets a threshold, the data at the wordline on which the threshold was met is moved along with the data at neighboring wordlines to an SLC block without moving the entire block. The performance impact and write amplification impact of read disturb mitigation can be significantly reduced while maintaining some data continuity.