公开(公告)号：US20250132245A1

公开(公告)日：2025-04-24

申请号：US18491111

申请日：2023-10-20

Applicant: Intel Corporation

Inventor： Tofizur RAHMAN ,  Conor P. Puls ,  Payam Amin ,  Santhosh Koduri ,  Clay Mortensen ,  Bozidar Marinkovic ,  Shivani Falgun Patel ,  Richard Bonsu ,  Jaladhi Mehta ,  Dincer Unluer

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: A fabrication method and associated integrated circuit (IC) structures and devices that include one or more self-insulated vias is described herein. In one example, an IC structure includes a via surrounded by an insulator material and a layer of insulator material between a conductive material of the via and the surrounding insulator material. In one example, the layer of insulator material has one or more material properties that are different than the surrounding insulator material, including one or more of a different density, a different dielectric constant, and a different material composition.