公开(公告)号：US20180286876A1

公开(公告)日：2018-10-04

申请号：US15477040

申请日：2017-04-01

Applicant: Intel Corporation

Inventor： Changhan Kim ,  Kunal Shrotri ,  John Hopkins ,  Darwin Franseda Fan

IPC: H01L27/11524 ,  H01L29/66 ,  H01L27/1157 ,  H01L29/792 ,  H01L29/423 ,  H01L27/12

CPC classification number: H01L27/11524 ,  H01L27/1157 ,  H01L27/1203 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/792

Abstract: Flash memory technology is disclosed. In one example, a flash memory component can include a plurality of insulative layers vertically spaced apart from one another. The memory component can also include a vertically oriented conductive channel extending through the plurality of insulative layers. In addition, the memory component can include a charge storage structure disposed between adjacent insulative layers. The charge storage structure can have a vertical cross section with a first side oriented toward the conductive channel and a second side opposite the first side. A length of the first side can be greater than a length of the second side. In another example, the vertical cross-section of the charge storage structure comprises a non-rectangular shape, such as a trapezoid shape. Associated systems and methods are also disclosed.

公开(公告)号：US10217755B2

公开(公告)日：2019-02-26

申请号：US15477040

申请日：2017-04-01

Applicant: Intel Corporation

Inventor： Changhan Kim ,  Kunal Shrotri ,  John Hopkins ,  Darwin Franseda Fan

IPC: G11C16/04 ,  H01L27/11524 ,  H01L29/66 ,  H01L27/1157 ,  H01L29/792 ,  H01L29/423 ,  H01L27/12

Abstract: Flash memory technology is disclosed. In one example, a flash memory component can include a plurality of insulative layers vertically spaced apart from one another. The memory component can also include a vertically oriented conductive channel extending through the plurality of insulative layers. In addition, the memory component can include a charge storage structure disposed between adjacent insulative layers. The charge storage structure can have a vertical cross section with a first side oriented toward the conductive channel and a second side opposite the first side. A length of the first side can be greater than a length of the second side. In another example, the vertical cross-section of the charge storage structure comprises a non-rectangular shape, such as a trapezoid shape. Associated systems and methods are also disclosed.