公开(公告)号：US20170222052A1

公开(公告)日：2017-08-03

申请号：US15489423

申请日：2017-04-17

Applicant: Intel Corporation

Inventor： Cory E. Weber ,  Mark Y. Liu ,  Anand S. Murthy ,  Hemant V. Deshpande ,  Daniel B. Aubertine

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/66 ,  H01L29/16 ,  H01L29/417 ,  H01L21/265 ,  H01L29/165

CPC classification number: H01L29/7848 ,  H01L21/26506 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41783 ,  H01L29/66477 ,  H01L29/66628 ,  H01L29/78 ,  H01L29/7847 ,  H01L29/7849

Abstract: A device is provided. The device includes a transistor formed on a semiconductor substrate, the transistor having a conduction channel. The device includes at least one edge dislocation formed adjacent to the conduction channel on the semiconductor substrate. The device also includes at least one free surface introduced above the conduction channel and the at least one edge dislocation.

公开(公告)号：US10084087B2

公开(公告)日：2018-09-25

申请号：US15489423

申请日：2017-04-17

Applicant: Intel Corporation

Inventor： Cory E. Weber ,  Mark Y. Liu ,  Anand S. Murthy ,  Hemant V. Deshpande ,  Daniel B. Aubertine

IPC: H01L29/78 ,  H01L21/265 ,  H01L29/08 ,  H01L29/165 ,  H01L29/16 ,  H01L29/417 ,  H01L29/66

CPC classification number: H01L29/7848 ,  H01L21/26506 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41783 ,  H01L29/66477 ,  H01L29/66628 ,  H01L29/78 ,  H01L29/7847 ,  H01L29/7849

Abstract: A device is provided. The device includes a transistor formed on a semiconductor substrate, the transistor having a conduction channel. The device includes at least one edge dislocation formed adjacent to the conduction channel on the semiconductor substrate. The device also includes at least one free surface introduced above the conduction channel and the at least one edge dislocation.