公开(公告)号：US20220413376A1

公开(公告)日：2022-12-29

申请号：US17358446

申请日：2021-06-25

Applicant: Intel Corporation

Inventor： Leonard Guler ,  Tahir Ghani ,  Charles Wallace ,  Hossam Abdallah ,  Dario Farias ,  Tsuan-Chung Chang ,  Chia-Ho Tsai ,  Chetana Singh ,  Desalegne Teweldebrhan ,  Robert Joachim ,  Shengsi Liu

IPC: G03F1/22 ,  G03F7/20 ,  H01L21/033 ,  H01L21/311

Abstract: Techniques for improved extreme ultraviolet (EUV) patterning using assist features, related transistor structures, integrated circuits, and systems, are disclosed. A number of semiconductor fins and assist features are patterned into a semiconductor substrate using EUV. The assist features increase coverage of absorber material in the EUV mask, thereby reducing bright field defects in the EUV patterning. The semiconductor fins and assist features are buried in fill material and a mask is patterned that exposes the assist features and covers the semiconductor fins. The exposed assist features are partially removed and the protected active fins are ultimately used in transistor devices.