公开(公告)号：US20220406778A1

公开(公告)日：2022-12-22

申请号：US17353263

申请日：2021-06-21

Applicant: Intel Corporation

Inventor： Tahir GHANI ,  Biswajeet GUHA ,  Mohit K. HARAN ,  Mohammad HASAN ,  Reken PATEL ,  Sean PURSEL ,  Jake JAFFE

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L29/06

Abstract: Integrated circuit structures having plugged metal gates, and methods of fabricating integrated circuit structures having plugged metal gates, are described. For example, an integrated circuit structure includes a fin having a portion protruding above a shallow trench isolation (STI) structure. A gate dielectric material layer is over the protruding portion of the fin and over the STI structure. A conductive gate layer is over the gate dielectric material layer. A conductive gate fill material is over the conductive gate layer. A dielectric gate plug is laterally spaced apart from the fin, the dielectric gate plug on the STI structure. The gate dielectric material layer and the conductive gate layer are along a side of the dielectric gate plug, and the gate dielectric material layer is in direct contact with an entirety of the side of the dielectric gate plug.