公开(公告)号：US20160372366A1

公开(公告)日：2016-12-22

申请号：US15254840

申请日：2016-09-01

Applicant: Intel Corporation

Inventor： Jun HE ,  Kevin J. FISCHER ,  Ying ZHOU ,  Peter K. MOON

IPC: H01L21/768 ,  H01L21/3205 ,  H01L23/532

CPC classification number: H01L21/76849 ,  H01L21/0217 ,  H01L21/02252 ,  H01L21/32053 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76844 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76888 ,  H01L23/5283 ,  H01L23/53209 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of fabricating a capped interconnect for a microelectronic device which includes a sealing feature for any gaps between a capping layer and an interconnect and structures formed therefrom. The sealing features improve encapsulation of the interconnect, which substantially reduces or prevents electromigration and/or diffusion of conductive material from the capped interconnect.

公开(公告)号：US20150097292A1

公开(公告)日：2015-04-09

申请号：US14569342

申请日：2014-12-12

Applicant: Intel Corporation

Inventor： Jun HE ,  Kevin J. FISCHER ,  Ying ZHOU ,  Peter K. MOON

IPC: H01L23/532 ,  H01L21/3205 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L21/76849 ,  H01L21/0217 ,  H01L21/02252 ,  H01L21/32053 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76844 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76888 ,  H01L23/5283 ,  H01L23/53209 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of fabricating a capped interconnect for a microelectronic device which includes a sealing feature for any gaps between a capping layer and an interconnect and structures formed therefrom. The sealing features improve encapsulation of the interconnect, which substantially reduces or prevents electromigration and/or diffusion of conductive material from the capped interconnect.

Abstract translation: 制造用于微电子器件的封盖互连的方法，其包括封盖层和互连件之间的任何间隙的密封特征以及由其形成的结构。 密封特征改善了互连的封装，其基本上减少或防止导电材料从封盖互连件的电迁移和/或扩散。