公开(公告)号：US20240194672A1

公开(公告)日：2024-06-13

申请号：US18064362

申请日：2022-12-12

Applicant: Intel Corporation

Inventor： Bharath Bangalore Rajeeva ,  Manish Chandhok ,  Gurpreet Singh ,  Kevin Huggins ,  Eungnak Han ,  Florian Gstrein ,  Marko Radosavljevic

IPC: H01L27/088 ,  H01L21/02 ,  H01L21/027 ,  H01L23/522 ,  H01L29/10 ,  H01L29/423

CPC classification number: H01L27/088 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/0271 ,  H01L23/5226 ,  H01L29/1033 ,  H01L29/42364

Abstract: An IC device may include a first conductive structure in a first section and a second conductive structure in a second section. The second conductive structure is in parallel with the first conductive structure in a first direction. A dimension of the second conductive structure in a second direction perpendicular to the first direction is greater than a dimension of the first conductive structure in the second direction. The first conductive structure may be coupled to a channel region of a transistor. The second conductive structure may be coupled to a channel region of another transistor. A first structure comprising a first dielectric material may be over the first conductive structure. A second structure comprising a second dielectric material may be over the second section. A third structure comprising the first dielectric material may be over the second conductive structure and be at least partially surrounded by the second structure.