REPLACEMENT VIA AND BURIED OR BACKSIDE POWER RAIL

    公开(公告)号:US20230197613A1

    公开(公告)日:2023-06-22

    申请号:US17556414

    申请日:2021-12-20

    Abstract: An integrated circuit structure includes a first sub-fin, a second sub-fin laterally spaced from the first sub-fin, a first transistor device over the first sub-fin and having a first contact, a second transistor device over the second sub-fin and having a second contact, and a continuous and monolithic body of conductive material extending vertically between the first and second transistor devices and the first and second sub-fins. The body of conductive material has (i) an upper portion between the first and second transistor devices and (ii) a lower portion between the first and second sub-fins. A continuous conformal layer extends along a sidewall of the lower portion of the body and a sidewall of the upper portion of the body. The integrated circuit structure further comprises a conductive interconnect feature connecting the upper portion of the body to at least one of the first and second contacts.

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