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公开(公告)号:US20230197613A1
公开(公告)日:2023-06-22
申请号:US17556414
申请日:2021-12-20
Applicant: Intel Corporation
Inventor: Prashant Majhi , Klaus Max Schruefer , Anand Murthy
IPC: H01L23/528 , H01L23/532 , H01L29/423 , H01L29/06 , H01L29/786 , H01L21/768
CPC classification number: H01L23/5286 , H01L23/53238 , H01L23/53266 , H01L29/42392 , H01L29/0665 , H01L29/78696 , H01L21/76877
Abstract: An integrated circuit structure includes a first sub-fin, a second sub-fin laterally spaced from the first sub-fin, a first transistor device over the first sub-fin and having a first contact, a second transistor device over the second sub-fin and having a second contact, and a continuous and monolithic body of conductive material extending vertically between the first and second transistor devices and the first and second sub-fins. The body of conductive material has (i) an upper portion between the first and second transistor devices and (ii) a lower portion between the first and second sub-fins. A continuous conformal layer extends along a sidewall of the lower portion of the body and a sidewall of the upper portion of the body. The integrated circuit structure further comprises a conductive interconnect feature connecting the upper portion of the body to at least one of the first and second contacts.
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公开(公告)号:US20240332126A1
公开(公告)日:2024-10-03
申请号:US18129654
申请日:2023-03-31
Applicant: Intel Corporation
Inventor: Andy Wei , Po-Yao Ke , Kai-Chiang Wu , Han-wen Lin , Klaus Max Schruefer , Dean Huang , Hsin-Hua Wang
IPC: H01L23/373 , H01L23/367
CPC classification number: H01L23/3737 , H01L23/3677 , H01L23/3735 , H01L23/481
Abstract: Thermal dissipation and grounding of integrated circuit (IC) devices with backside power delivery networks are discussed. An IC device layer between frontside and backside interconnect sections, composed mostly of an insulating material, is coupled to a crystalline heat spreader or a metal thermal ground layer by an array of thermal pillars extending through the insulating material. The crystalline heat spreader layer may include one or more thermal sensors, such as thermal sensing diodes, also coupled to the IC device layer by one or more thermal pillars. The IC device layer and crystalline layers are coupled by a hybrid bond, which forms the thermal pillars through a continuous section of the insulating material.
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