公开(公告)号：US20180323078A1

公开(公告)日：2018-11-08

申请号：US15774255

申请日：2015-12-24

Applicant: Intel Corporation

Inventor： Stephanie A. BOJARSKI ,  Manish CHANDHOK ,  Todd R. YOUNKIN ,  Eungnak HAN ,  Kranthi Kumar ELINENI ,  Ashish N. GAIKWAD ,  Paul A. NYHUS ,  Charles H. WALLACE ,  Hui Jae YOO

IPC: H01L21/311 ,  H01L21/033

CPC classification number: H01L21/31144 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/0338

Abstract: A method including forming a target pattern of a target material on a surface of a substrate; depositing a block copolymer on the surface of the substrate, wherein one of two blocks of the block copolymer preferentially aligns to the target material and the two blocks self assemble after deposition into repeating lamellar bodies on the surface of the substrate; selectively retaining one of the two blocks of the block copolymer over the other as a polymer pattern; and patterning the substrate with the polymer pattern. An apparatus including an integrated circuit substrate including a plurality of contact points and a dielectric layer on the contact points; a target pattern formed in a surface of the dielectric layer; and a self-assembled layer of repeating alternating bodies of a block copolymer, wherein one of two blocks of the block copolymer is preferentially aligned to the target pattern.