公开(公告)号：US20190280188A1

公开(公告)日：2019-09-12

申请号：US16348364

申请日：2016-12-28

Applicant: Intel Corporation

Inventor： Justin BROCKMAN ,  Christopher WIEGAND ,  MD Tofizur RAHMAN ,  Daniel OUELETTE ,  Angeline SMITH ,  Juan ALZATE VINASCO ,  Charles KUO ,  Mark DOCZY ,  Kaan OGUZ ,  Kevin O'BRIEN ,  Brian DOYLE ,  Oleg GOLONZKA ,  Tahir GHANI

IPC: H01L43/02 ,  H01F10/32 ,  G11C11/16 ,  H01L43/12 ,  H01F41/30

Abstract: An apparatus comprises a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier between the free and fixed layers, the tunnel barrier directly contacting a first side of the free layer, a capping layer contacting the second side of the free magnetic layer and boron absorption layer positioned a fixed distance above the capping layer.