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公开(公告)号:US20190280188A1
公开(公告)日:2019-09-12
申请号:US16348364
申请日:2016-12-28
Applicant: Intel Corporation
Inventor: Justin BROCKMAN , Christopher WIEGAND , MD Tofizur RAHMAN , Daniel OUELETTE , Angeline SMITH , Juan ALZATE VINASCO , Charles KUO , Mark DOCZY , Kaan OGUZ , Kevin O'BRIEN , Brian DOYLE , Oleg GOLONZKA , Tahir GHANI
Abstract: An apparatus comprises a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier between the free and fixed layers, the tunnel barrier directly contacting a first side of the free layer, a capping layer contacting the second side of the free magnetic layer and boron absorption layer positioned a fixed distance above the capping layer.
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公开(公告)号:US20220310849A1
公开(公告)日:2022-09-29
申请号:US17840186
申请日:2022-06-14
Applicant: Intel Corporation
Inventor: Travis W. LAJOIE , Abhishek SHARMA , Van H. LE , Chieh-Jen KU , Pei-Hua WANG , Jack T. KAVALIEROS , Bernhard SELL , Tahir GHANI , Juan ALZATE VINASCO
IPC: H01L29/786 , H01L29/66 , H01L27/108 , H01L29/49
Abstract: Embodiments herein describe techniques for a semiconductor device including a capacitor and a transistor above the capacitor. A contact electrode may be shared between the capacitor and the transistor. The capacitor includes a first plate above a substrate, and the shared contact electrode above the first plate and separated from the first plate by a capacitor dielectric layer, where the shared contact electrode acts as a second plate for the capacitor. The transistor includes a gate electrode above the substrate and above the capacitor; a channel layer separated from the gate electrode by a gate dielectric layer, and in contact with the shared contact electrode; and a source electrode above the channel layer, separated from the gate electrode by the gate dielectric layer, and in contact with the channel layer. The shared contact electrode acts as a drain electrode of the transistor. Other embodiments may be described and/or claimed.
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