公开(公告)号：US20240004310A1

公开(公告)日：2024-01-04

申请号：US17854799

申请日：2022-06-30

Applicant: Intel Corporation

Inventor： William Blanton ,  Deepak Selvanathan ,  Shakul Tandon ,  Martin N. Weiss

IPC: G03F7/20 ,  H01L23/544

CPC classification number: G03F7/70633 ,  H01L23/544

Abstract: Embodiments disclosed herein include semiconductor die with overlay marks, electronic devices that include semiconductor dies with overlay marks, and methods of measuring overlay. In one embodiment, a semiconductor die includes multiple overlay marks, including a first overlay mark and a second overlay mark. The first overlay mark is at a first position on the semiconductor die and includes a first set of patterns with a first orientation. The second overlay mark is at a second position on the semiconductor die and includes a second set of patterns with a second orientation. The first position of the first mark and the second position of the second mark are non-overlapping. In addition, the first orientation of the patterns in the first mark is substantially orthogonal to the second orientation of the patterns in the second mark.

公开(公告)号：US20230420381A1

公开(公告)日：2023-12-28

申请号：US17847111

申请日：2022-06-22

Applicant: Intel Corporation

Inventor： Martin N. Weiss

IPC: H01L23/544 ,  G03F9/00 ,  G03F7/20

CPC classification number: H01L23/544 ,  G03F9/7076 ,  G03F7/70633 ,  G03F9/708 ,  H01L2223/54426

Abstract: Techniques for forming overlay metrology marks are disclosed. In the illustrative embodiment, a first overlay metrology mark is on a first layer of a semiconductor wafer, and a second metrology mark is formed on a second layer above the first layer. The overlay metrology marks are embodied as a series of grating lines. Looking downward at the overlay metrology marks, the two metrology marks form a moire pattern, with the light and dark regions of the moire pattern moving as the relative positions of the overlay metrology marks move. In the illustrative embodiment, at least one of the overlay metrology marks has non-uniform grating line spacing. As a result, the moire pattern is not identical if the overlay metrology mark is shifted by one grating line, allowing for a wider range of overlay errors to be detected.