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公开(公告)号:US20170140809A1
公开(公告)日:2017-05-18
申请号:US15351195
申请日:2016-11-14
Applicant: Intel Corporation
Inventor: Christopher P. Mozak , Randy B. Osborne , Michael Gutzmann , James A. McCall
IPC: G11C11/4093 , G11C11/4096 , G11C11/4076
CPC classification number: G11C11/4093 , G06F13/1684 , G06F13/1689 , G11C11/4076 , G11C11/4096
Abstract: Methods and apparatus related to multiple rank high bandwidth memory are described. In one embodiment, a semiconductor package includes a high bandwidth memory with multiple ranks. Other embodiments are also disclosed and claimed.
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公开(公告)号:US11569161B2
公开(公告)日:2023-01-31
申请号:US16260623
申请日:2019-01-29
Applicant: Intel Corporation
Inventor: Chong Zhao , James McCall , Michael Gutzmann
IPC: H01L23/498 , H01L27/108
Abstract: Embodiments disclosed herein include electronic packages and methods of forming such packages. In an embodiment, the electronic package comprises a package substrate, that comprises a bumpout region on a first surface of the package substrate, and a pin region on a second surface of the package substrate. In an embodiment, a data path from the bumpout region to the pin region is included in the electronic package. In an embodiment, a ground path brackets the data path from the bumpout region to the pin region.
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公开(公告)号:US10079052B2
公开(公告)日:2018-09-18
申请号:US15944755
申请日:2018-04-03
Applicant: Intel Corporation
Inventor: Christopher P. Mozak , Randy B. Osborne , Michael Gutzmann , James A. McCall
IPC: G11C8/00 , G11C11/4093 , G11C11/4076 , G11C11/4096
CPC classification number: G11C11/4093 , G06F13/1684 , G06F13/1689 , G11C11/4076 , G11C11/4096 , Y02D10/14
Abstract: Methods and apparatus related to multiple rank high bandwidth memory are described. In one embodiment, a semiconductor package includes a high bandwidth memory with multiple ranks. Other embodiments are also disclosed and claimed.
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公开(公告)号:US09934842B2
公开(公告)日:2018-04-03
申请号:US15351195
申请日:2016-11-14
Applicant: Intel Corporation
Inventor: Christopher P. Mozak , Randy B. Osborne , Michael Gutzmann , James A. McCall
IPC: G11C8/00 , G11C11/4093 , G11C11/4076 , G11C11/4096
CPC classification number: G11C11/4093 , G06F13/1684 , G06F13/1689 , G11C11/4076 , G11C11/4096
Abstract: Methods and apparatus related to multiple rank high bandwidth memory are described. In one embodiment, a semiconductor package includes a high bandwidth memory with multiple ranks. Other embodiments are also disclosed and claimed.
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公开(公告)号:US20180226118A1
公开(公告)日:2018-08-09
申请号:US15944755
申请日:2018-04-03
Applicant: Intel Corporation
Inventor: Christopher P. Mozak , Randy B. Osborne , Michael Gutzmann , James A. McCall
IPC: G11C11/4093 , G11C11/4076 , G11C11/4096
CPC classification number: G11C11/4093 , G06F13/1684 , G06F13/1689 , G11C11/4076 , G11C11/4096
Abstract: Methods and apparatus related to multiple rank high bandwidth memory are described. In one embodiment, a semiconductor package includes a high bandwidth memory with multiple ranks. Other embodiments are also disclosed and claimed.
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