公开(公告)号：US20220415791A1

公开(公告)日：2022-12-29

申请号：US17357773

申请日：2021-06-24

Applicant: Intel Corporation

Inventor： Leonard P. GULER ,  Tsuan-Chung CHANG ,  Michael James MAKOWSKI ,  Benjamin KRIEGEL ,  Robert JOACHIM ,  Desalegne B. TEWELDEBRHAN ,  Charles H. WALLACE ,  Tahir GHANI ,  Mohammad HASAN

IPC: H01L23/528 ,  H01L23/522 ,  H01L21/768

Abstract: Embodiments of the disclosure are in the field of integrated circuit structure fabrication. In an example, an integrated circuit structure includes a dielectric material structure having a trench therein. A conductive interconnect line in the trench, the conductive interconnect line having a length and a width, the width having a cross-sectional profile, wherein the cross-sectional profile of the width of the conductive interconnect line has a bottom lateral width, a mid-height lateral width, and a top lateral width, and wherein the mid-height lateral width is greater than the bottom lateral width, and the mid-height lateral width is greater than the top lateral width.