公开(公告)号：US20210224267A1

公开(公告)日：2021-07-22

申请号：US17227045

申请日：2021-04-09

Applicant: Intel Corporation

Inventor： Sourabh DONGAONKAR ,  Jawad B. KHAN ,  Chetan CHAUHAN ,  Dipanjan SENGUPTA ,  Mariano TEPPER ,  Theodore WILLKE ,  Richard L. COULSON

IPC: G06F16/2458 ,  G06F16/248 ,  G06F16/21 ,  G06F16/22 ,  G06N7/00

Abstract: Technologies for tuning performance and/or accuracy of similarity search using stochastic associative memories (SAM). Under a first subsampling approach, columns associated with set bits in a search key comprising a binary bit vector are subsampled. Matching set bits for the subsampled columns are aggregated on a row-wise basis to generate similarity scores, which are then ranked. A similar scheme is applied for all the columns with set bits in the search key and the results for top ranked rows are compared to evaluate a tradeoff between throughput boost versus lost accuracy. A second approach called continuous column read, and iterative approach is employed that continuously scores the rows as each new column read is complete. The similarity scores for an N-1 and Nth-1 iteration are ranked, a rank correlation is calculated, and a determination is made to whether the rank correlation meets or exceeds a threshold.

公开(公告)号：US20200219580A1

公开(公告)日：2020-07-09

申请号：US16827235

申请日：2020-03-23

Applicant: Intel Corporation

Inventor： Jawad B. KHAN ,  Richard L. COULSON ,  Zion S. KWOK ,  Ravi H. MOTWANI

IPC: G11C29/42 ,  G11C29/44 ,  G11C29/02 ,  G11C11/409 ,  G11C5/02

Abstract: Error correction values for a memory device include row error correction values and column error correction values for the same memory array. The memory device includes a memory array that is addressable in two spatial dimensions: a row dimension and a column dimension. The memory array is written as rows of data, and can be read as rows in the row dimension or read as columns in the column dimension. A data write triggers updates to row error correction values and to column error correction values.