公开(公告)号：US20250113580A1

公开(公告)日：2025-04-03

申请号：US18374528

申请日：2023-09-28

Applicant: Intel Corporation

Inventor： Leonard Guler ,  Shaun Mills ,  Joseph D'Silva ,  Ehren Mannebach ,  Mauro Kobrinsky ,  Charles H. Wallace ,  Kalpesh Mahajan ,  Vivek Vishwakarma ,  Dincer Unluer ,  Jessica Panella

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: Devices, transistor structures, systems, and techniques are described herein related to contacting source and drain transistor structures from the device backside at small dimensions and cell sizes. A first subset of dummy contact structures are removed and backfilled with contact metal and a first etch stop material. A second subset of dummy contact structures are removed and backfilled with contact metal and a second etch stop material. Subsequent metallization contacts to the first and second contacts are made using two masking/selective etch processes such that any misalignment to the other contact type does not allow contact due to the pertinent etch stop material.

公开(公告)号：US20240332379A1

公开(公告)日：2024-10-03

申请号：US18129688

申请日：2023-03-31

Applicant: Intel Corporation

Inventor： Shaun Mills ,  Ehren Mannebach ,  Mauro Kobrinsky ,  Kai Loon Cheong ,  Makram Abd El Qader

IPC: H01L29/417 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775

CPC classification number: H01L29/41766 ,  H01L21/823475 ,  H01L27/088 ,  H01L29/0673 ,  H01L29/41775 ,  H01L29/42392 ,  H01L29/775

Abstract: Devices, transistor structures, systems, and techniques are described herein related to backside contacts for field effect transistors formed using a backside contact etch prior to cavity spacer formation. A transistor includes semiconductor structures such as nanoribbons extending between a source and a drain. A spacer material is between a gate and the source/drain as cavity spacer fill. The spacer material is also between a portion of a backside contact and a portion of the source/drain, to eliminate a short between the backside contact and the gate.