公开(公告)号：US20250113580A1

公开(公告)日：2025-04-03

申请号：US18374528

申请日：2023-09-28

Applicant: Intel Corporation

Inventor： Leonard Guler ,  Shaun Mills ,  Joseph D'Silva ,  Ehren Mannebach ,  Mauro Kobrinsky ,  Charles H. Wallace ,  Kalpesh Mahajan ,  Vivek Vishwakarma ,  Dincer Unluer ,  Jessica Panella

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: Devices, transistor structures, systems, and techniques are described herein related to contacting source and drain transistor structures from the device backside at small dimensions and cell sizes. A first subset of dummy contact structures are removed and backfilled with contact metal and a first etch stop material. A second subset of dummy contact structures are removed and backfilled with contact metal and a second etch stop material. Subsequent metallization contacts to the first and second contacts are made using two masking/selective etch processes such that any misalignment to the other contact type does not allow contact due to the pertinent etch stop material.

公开(公告)号：US20240321892A1

公开(公告)日：2024-09-26

申请号：US18125880

申请日：2023-03-24

Applicant: Intel Corporation

Inventor： Leonard P. Guler ,  Glenn Glass ,  Jessica Panella ,  Dan S. Lavric ,  Charles H. Wallace

IPC: H01L27/12 ,  H01L21/84

CPC classification number: H01L27/1203 ,  H01L21/84 ,  H01L21/823814 ,  H01L21/823878 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775

Abstract: Techniques to form semiconductor devices having one or more epitaxial source or drain regions formed between dielectric walls that separate each adjacent pair of source or drain regions. In an example, a semiconductor device includes a semiconductor region extending in a first direction from a source or drain region. Dielectric walls extend in the first direction adjacent to opposite sides of the source or drain region. The first and second dielectric walls also extend in the first direction through a gate structure present over the semiconductor region. A dielectric liner exists between at least a portion of the first side of the source or drain region and the first dielectric wall and/or at least a portion of the second side of the source or drain region and the second dielectric wall. The dielectric walls may separate the source or drain region from other adjacent source or drain regions.